All IGBT. F3L100R12W2H3-B11 Datasheet

 

F3L100R12W2H3-B11 Datasheet and Replacement


   Type Designator: F3L100R12W2H3-B11
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 375 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 20(100C) A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.45 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 20 nS
   Qgⓘ - Total Gate Charge, typ: 800 nC
   Package: MODULE
      - IGBT Cross-Reference

 

F3L100R12W2H3-B11 Datasheet (PDF)

 0.1. Size:985K  infineon
 f3l100r12w2h3-b11.pdf pdf_icon

F3L100R12W2H3-B11

Technische Information / Technical InformationIGBT-ModulF3L100R12W2H3_B11IGBT-ModuleEasyPACK Modul mit aktiver "Neutral Point Clamp 2" Topologie und PressFIT / NTCEasyPACK module with active "Neutral Point Clamp 2" topology and PressFIT / NTCVorlufige Daten / Preliminary Data V = 1200VCESI = 50A / I = 100AC nom CRMTypische Anwendungen Typical Applications 3-Level-

 1.1. Size:1149K  infineon
 f3l100r12w2h3 b11.pdf pdf_icon

F3L100R12W2H3-B11

/ Technical InformationIGBT-F3L100R12W2H3_B11IGBT-ModuleEasyPACK 2 and PressFIT / NTCEasyPACK module with active "Neutral Point Clamp 2" topology and PressFIT / NTC / Preliminary Data V = 1200VCESI = 50A

 7.1. Size:767K  infineon
 f3l100r07w2e3 b11.pdf pdf_icon

F3L100R12W2H3-B11

Technische Information / Technical InformationIGBT-ModuleF3L100R07W2E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 650VCESI = 100A / I = 200AC nom CRMTypische Anwendungen Typic

 7.2. Size:819K  infineon
 f3l100r07w2e3-b11.pdf pdf_icon

F3L100R12W2H3-B11

Technische Information / Technical InformationIGBT-ModuleF3L100R07W2E3_B11IGBT-modulesEasyPACK Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTCEasyPACK module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTCVorlufige Daten / Preliminary DataV = 650VCESI = 100A / I = 200AC nom CRMTypische Anwendungen Typic

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Datasheet: DF150R12RT4 , DF200R12KE3 , DF200R12PT4-B6 , DF300R12KE3 , DF400R12KE3 , DF900R12IP4D , DF900R12IP4DV , F3L100R07W2E3-B11 , RJH3047 , F3L150R07W2E3-B11 , F3L150R12W2H3-B11 , F3L15R12W2H3-B27 , F3L25R12W1T4-B27 , F3L300R12ME4-B22 , F3L300R12ME4-B23 , F3L300R12MT4-B22 , FB20R06W1E3-B11 .

History: AIKW50N65DF5 | NGTB40N120L | SKM75GB063D | NGTB20N135IHRWG | RJH60V3BDPP-M0 | MMG100S120UA6TC

Keywords - F3L100R12W2H3-B11 transistor datasheet

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 F3L100R12W2H3-B11 substitution
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