F3L100R12W2H3-B11 IGBT. Datasheet pdf. Equivalent
Type Designator: F3L100R12W2H3-B11
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 375 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 20(100C) A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.45 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 20 nS
Qgⓘ - Total Gate Charge, typ: 800 nC
Package: MODULE
F3L100R12W2H3-B11 Transistor Equivalent Substitute - IGBT Cross-Reference Search
F3L100R12W2H3-B11 Datasheet (PDF)
f3l100r12w2h3-b11.pdf
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f3l100r12w2h3 b11.pdf
/ Technical InformationIGBT-F3L100R12W2H3_B11IGBT-ModuleEasyPACK 2 and PressFIT / NTCEasyPACK module with active "Neutral Point Clamp 2" topology and PressFIT / NTC / Preliminary Data V = 1200VCESI = 50A
f3l100r07w2e3 b11.pdf
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f3l100r07w2e3-b11.pdf
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Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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