IGW30N60TP - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGW30N60TP
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 200
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 53
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.6
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 21
Capacitancia de salida (Cc), typ, pF: 45
Paquete / Cubierta: TO247
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IGW30N60TP Datasheet (PDF)
igw30n60tp.pdf
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igw30n60t.pdf
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igw30n60h3.pdf
IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW30N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIGW30N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI Very soft, fast recovery anti-parallel d
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
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