IGW30N60TP Todos los transistores

 

IGW30N60TP IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IGW30N60TP

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 200 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 53 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃

trⓘ - Tiempo de subida, typ: 21 nS

Coesⓘ - Capacitancia de salida, typ: 45 pF

Encapsulados: TO247

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IGW30N60TP datasheet

 ..1. Size:1458K  infineon
igw30n60tp.pdf pdf_icon

IGW30N60TP

IGBT TRENCHSTOPTM Performance technology IGW30N60TP 600V IGBT TRENCHSTOPTM Performance series Data sheet Industrial Power Control IGW30N60TP TRENCHSTOPTM Performance Series High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low turn-off losses short tail current low EMI G maximum junction temperat

 5.1. Size:490K  infineon
igw30n60t.pdf pdf_icon

IGW30N60TP

IGW30N60T TRENCHSTOP Series Low Loss IGBT IGBT in TRENCHSTOP and Fieldstop technology Features C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G Designed for E - Frequency Converters - Uninterruptible Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers

 6.1. Size:1561K  infineon
igw30n60h3 rev1 1g.pdf pdf_icon

IGW30N60TP

IGBT High speed IGBT in Trench and Fieldstop technology IGW30N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IGW30N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI Very soft, fast recovery anti-parallel d

 6.2. Size:1997K  infineon
igw30n60h3.pdf pdf_icon

IGW30N60TP

IGBT High speed IGBT in Trench and Fieldstop technology IGW30N60H3 600V high speed switching series third generation Data sheet Industrial Power Control IGW30N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI Very soft, fast recovery anti-parallel d

Otros transistores... FD1200R17HP4-K-B2 , FD150R12RT4 , FD1600-1200R17HP4-K-B2 , IGB15N65S5 , IGB20N65S5 , IGB50N65H5 , IGB50N65S5 , IGU04N60T , GT30F131 , IGW40N60DTP , IGW50N60TP , IGW75N65H5 , IGZ100N65H5 , IGZ50N65H5 , IGZ75N65H5 , IHFW40N65R5S , IHW25N120E1 .

History: MG75Q1BS11

 

 

 


History: MG75Q1BS11

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