IGW30N60TP IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGW30N60TP
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 200 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 53 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
trⓘ - Tiempo de subida, typ: 21 nS
Coesⓘ - Capacitancia de salida, typ: 45 pF
Encapsulados: TO247
Búsqueda de reemplazo de IGW30N60TP IGBT
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IGW30N60TP datasheet
igw30n60tp.pdf
IGBT TRENCHSTOPTM Performance technology IGW30N60TP 600V IGBT TRENCHSTOPTM Performance series Data sheet Industrial Power Control IGW30N60TP TRENCHSTOPTM Performance Series High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low turn-off losses short tail current low EMI G maximum junction temperat
igw30n60t.pdf
IGW30N60T TRENCHSTOP Series Low Loss IGBT IGBT in TRENCHSTOP and Fieldstop technology Features C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G Designed for E - Frequency Converters - Uninterruptible Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers
igw30n60h3 rev1 1g.pdf
IGBT High speed IGBT in Trench and Fieldstop technology IGW30N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IGW30N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI Very soft, fast recovery anti-parallel d
igw30n60h3.pdf
IGBT High speed IGBT in Trench and Fieldstop technology IGW30N60H3 600V high speed switching series third generation Data sheet Industrial Power Control IGW30N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI Very soft, fast recovery anti-parallel d
Otros transistores... FD1200R17HP4-K-B2 , FD150R12RT4 , FD1600-1200R17HP4-K-B2 , IGB15N65S5 , IGB20N65S5 , IGB50N65H5 , IGB50N65S5 , IGU04N60T , GT30F131 , IGW40N60DTP , IGW50N60TP , IGW75N65H5 , IGZ100N65H5 , IGZ50N65H5 , IGZ75N65H5 , IHFW40N65R5S , IHW25N120E1 .
History: MG75Q1BS11
History: MG75Q1BS11
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