IGW30N60TP Specs and Replacement
Type Designator: IGW30N60TP
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 53 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
tr ⓘ - Rise Time, typ: 21 nS
Coesⓘ - Output Capacitance, typ: 45 pF
Package: TO247
IGW30N60TP Substitution - IGBTⓘ Cross-Reference Search
IGW30N60TP datasheet
igw30n60tp.pdf
IGBT TRENCHSTOPTM Performance technology IGW30N60TP 600V IGBT TRENCHSTOPTM Performance series Data sheet Industrial Power Control IGW30N60TP TRENCHSTOPTM Performance Series High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low turn-off losses short tail current low EMI G maximum junction temperat... See More ⇒
igw30n60t.pdf
IGW30N60T TRENCHSTOP Series Low Loss IGBT IGBT in TRENCHSTOP and Fieldstop technology Features C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G Designed for E - Frequency Converters - Uninterruptible Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers ... See More ⇒
igw30n60h3 rev1 1g.pdf
IGBT High speed IGBT in Trench and Fieldstop technology IGW30N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IGW30N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI Very soft, fast recovery anti-parallel d... See More ⇒
igw30n60h3.pdf
IGBT High speed IGBT in Trench and Fieldstop technology IGW30N60H3 600V high speed switching series third generation Data sheet Industrial Power Control IGW30N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology Features C TRENCHSTOPTM technology offering very low V CEsat low EMI Very soft, fast recovery anti-parallel d... See More ⇒
Specs: FD1200R17HP4-K-B2, FD150R12RT4, FD1600-1200R17HP4-K-B2, IGB15N65S5, IGB20N65S5, IGB50N65H5, IGB50N65S5, IGU04N60T, GT30F131, IGW40N60DTP, IGW50N60TP, IGW75N65H5, IGZ100N65H5, IGZ50N65H5, IGZ75N65H5, IHFW40N65R5S, IHW25N120E1
Keywords - IGW30N60TP transistor spec
IGW30N60TP cross reference
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IGW30N60TP lookup
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IGW30N60TP replacement
History: IGC19T65QE
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