IGW50N60TP - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGW50N60TP
Tipo de transistor: IGBT
Código de marcado: G50DTP
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 319.2
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 80
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.6
Tensión máxima de puerta-umbral |VGE(th)|, V: 5.7
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 30
Capacitancia de salida (Cc), typ, pF: 83
Carga total de la puerta (Qg), typ, nC: 249
Paquete / Cubierta: TO247
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IGW50N60TP Datasheet (PDF)
igw50n60tp.pdf
IGBTTRENCHSTOPTM Performance technologyIGW50N60TP600V IGBT TRENCHSTOPTM Performance seriesData sheetIndustrial Power ControlIGW50N60TPTRENCHSTOPTM Performance SeriesHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low turn-off losses short tail current low EMI G maximum junction temperat
igp50n60t igw50n60t rev2 6g.pdf
IGP50N60T TrenchStop Series IGW50N60TLow Loss IGBT in TrenchStop and Fieldstop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G Designed for : E - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 600 V applications offers : P
igw50n60t.pdf
IGW50N60T TRENCHSTOP Series Low Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technology CFeatures: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C G Short circuit withstand time 5s E Designed for : - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers :
igw50n60h3.pdf
IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW50N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIGW50N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI Very soft, fast recovery anti-parallel d
igw50n60h3 rev1 2g.pdf
IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW50N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIGW50N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI maximum junction temperature 175C G
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
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