IGW50N60TP IGBT. Datasheet pdf. Equivalent
Type Designator: IGW50N60TP
Type: IGBT
Marking Code: G50DTP
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 319.2
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 80
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.6
Maximum G-E Threshold Voltag |VGE(th)|, V: 5.7
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 30
Collector Capacity (Cc), typ, pF: 83
Total Gate Charge (Qg), typ, nC: 249
Package: TO247
IGW50N60TP Transistor Equivalent Substitute - IGBT Cross-Reference Search
IGW50N60TP Datasheet (PDF)
igw50n60tp.pdf
IGBTTRENCHSTOPTM Performance technologyIGW50N60TP600V IGBT TRENCHSTOPTM Performance seriesData sheetIndustrial Power ControlIGW50N60TPTRENCHSTOPTM Performance SeriesHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low turn-off losses short tail current low EMI G maximum junction temperat
igp50n60t igw50n60t rev2 6g.pdf
IGP50N60T TrenchStop Series IGW50N60TLow Loss IGBT in TrenchStop and Fieldstop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G Designed for : E - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 600 V applications offers : P
igw50n60t.pdf
IGW50N60T TRENCHSTOP Series Low Loss IGBT : IGBT in TRENCHSTOP and Fieldstop technology CFeatures: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C G Short circuit withstand time 5s E Designed for : - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers :
igw50n60h3.pdf
IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW50N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIGW50N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI Very soft, fast recovery anti-parallel d
igw50n60h3 rev1 2g.pdf
IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW50N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIGW50N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI maximum junction temperature 175C G
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
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