IXGH24N60B Todos los transistores

 

IXGH24N60B - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXGH24N60B
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 150 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 48 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.5(max) V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 15 nS
   Coesⓘ - Capacitancia de salida, typ: 135 pF
   Qgⓘ - Carga total de la puerta, typ: 90 nC
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

IXGH24N60B Datasheet (PDF)

 ..1. Size:137K  ixys
ixgh24n60b.pdf pdf_icon

IXGH24N60B

IXGH 24N60B VCES = 600 VHiPerFASTTM IGBTIC25 = 48 AVCE(sat) = 2.3 Vtfi = 80 nsPreliminary DataTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VC (TAB)GIC25 TC = 25C48 ACEIC90 TC = 90C24 AG = Gate, C = Collector,ICM TC = 25C, 1 ms 96 A

 ..2. Size:118K  ixys
ixgh24n50b ixgh24n60b.pdf pdf_icon

IXGH24N60B

VCES IC(25) VCE(sat) tfiHiPerFASTTM IGBTIXGH24N50B 500 V 48 A 2.3 V 80 ns600 V 48 A 2.5 V 80 nsIXGH24N60BPreliminary dataSymbol Test Conditions Maximum RatingsTO-247 AD24N50 24N60VCES TJ = 25 C to 150 C 500 600 VVCGR TJ = 25 C to 150 C; RGE = 1 M 500 600 VC (TAB)VGES Continuous 20 VGVGEM Transient 30 V CEIC25 TC = 25 C48 AG = Gate, C = Collector,IC90 TC = 9

 0.1. Size:133K  ixys
ixgh24n50bu1 ixgh24n60bu1.pdf pdf_icon

IXGH24N60B

VCES IC(25) VCE(sat) tfiHiPerFASTTM IGBT500 V 48 A 2.3 V 80 nsIXGH24N50BU1with Diode600 V 48 A 2.5 V 80 nsIXGH24N60BU1Combi PackPreliminary dataTO-247 ADSymbol Test Conditions Maximum Ratings24N50 24N60C (TAB)VCES TJ = 25 C to 150 C 500 600 VGVCGR TJ = 25 C to 150 C; RGE = 1 M 500 600 V CEVGES Continuous 20 VVGEM Transient 30 VG = Gate, C = Collector,E

 5.1. Size:101K  ixys
ixgh24n60cd1.pdf pdf_icon

IXGH24N60B

IXGH 24N60CD1 VCES = 600 VHiPerFASTTM IGBTIXGT 24N60CD1 IC25 = 48 Awith Diode VCE(sat) = 2.5 VLightspeed SeriesPreliminary dataTO-268Symbol Test Conditions Maximum Ratings(IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VGVGES Continuous 20 V E C (TAB)VGEM Transient 30 VIC25 TC = 25C48 ATO-247 AD(IXGH)IC110 TC = 110C24 A

Otros transistores... IXGH20N30S , IXGH20N60B , IXGH20N60BD1 , IXGH22N50B , IXGH22N50BU1 , IXGH22N50C , IXGH24N50B , IXGH24N50BU1 , IKW75N60T , IXGH24N60BU1 , IXGH24N60C , IXGH24N60CD1 , IXGH25N100 , IXGH25N100A , IXGH25N100AU1 , IXGH25N100U1 , IXGH25N120 .

History: IXGH24N50BU1

 

 
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