IXGH24N60BU1 Todos los transistores

 ..1. Size:133K  ixys
 ixgh24n50bu1 ixgh24n60bu1.pdf

VCES IC(25) VCE(sat) tfi HiPerFASTTM IGBT 500 V 48 A 2.3 V 80 ns IXGH24N50BU1 with Diode 600 V 48 A 2.5 V 80 ns IXGH24N60BU1 Combi Pack Preliminary data TO-247 AD Symbol Test Conditions Maximum Ratings 24N50 24N60 C (TAB) VCES TJ = 25 C to 150 C 500 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 500 600 V C E VGES Continuous 20 V VGEM Transient 30 V G = Gate, C = Collector, E

 4.1. Size:137K  ixys
 ixgh24n60b.pdf

IXGH 24N60B VCES = 600 V HiPerFASTTM IGBT IC25 = 48 A VCE(sat) = 2.3 V tfi = 80 ns Preliminary Data TO-247 AD Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V VGEM Transient 30 V C (TAB) G IC25 TC = 25 C48 A C E IC90 TC = 90 C24 A G = Gate, C = Collector, ICM TC = 25 C, 1 ms 96 A

 4.2. Size:118K  ixys
 ixgh24n50b ixgh24n60b.pdf

VCES IC(25) VCE(sat) tfi HiPerFASTTM IGBT IXGH24N50B 500 V 48 A 2.3 V 80 ns 600 V 48 A 2.5 V 80 ns IXGH24N60B Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD 24N50 24N60 VCES TJ = 25 C to 150 C 500 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 500 600 V C (TAB) VGES Continuous 20 V G VGEM Transient 30 V C E IC25 TC = 25 C48 A G = Gate, C = Collector, IC90 TC = 9

 5.1. Size:101K  ixys
 ixgh24n60cd1.pdf

IXGH 24N60CD1 VCES = 600 V HiPerFASTTM IGBT IXGT 24N60CD1 IC25 = 48 A with Diode VCE(sat) = 2.5 V Lightspeed Series Preliminary data TO-268 Symbol Test Conditions Maximum Ratings (IXGT) VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V G VGES Continuous 20 V E C (TAB) VGEM Transient 30 V IC25 TC = 25 C48 A TO-247 AD (IXGH) IC110 TC = 110 C24 A

 5.2. Size:233K  ixys
 ixgh24n60c4d1.pdf

VCES = 600V High-Gain IGBT IXGH24N60C4D1 IC110 = 24A w/ Diode VCE(sat) 2.70V tfi(typ) = 68ns High-Speed PT Trench IGBT TO-247 AD Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 600 V C Tab E VCGR TJ = 25 C to 150 C, RGE = 1M 600 V VGES Continuous 20 V G = Gate C = Collector VGEM Transient 30 V E = Emitter

 5.3. Size:92K  ixys
 ixgh24n60c4.pdf

Advance Technical Information High-Gain IGBTs VCES = 600V IXGP24N60C4 IC110 = 24A IXGH24N60C4 VCE(sat) 2.70V tfi(typ) = 68ns High-Speed PT Trench IGBTs TO-220AB (IXGP) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V G C Tab VCGR TJ = 25 C to 150 C, RGE = 1M 600 V E VGES Continuous 20 V VGEM Transient 30 V TO-247 AD (IX

 5.4. Size:117K  ixys
 ixgh24n60aui.pdf

VCES = 600 V IXGH 24N60AU1 HiPerFASTTM IC25 = 48 A IXGH 24N60AU1S IGBT with Diode VCE(sat) = 2.7 V Combi Pack tfi = 275 ns TO-247 SMD (24N60AU1S) Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V G C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-247 AD IC25 TC = 25 C48 A (24N60AU1) IC90 TC = 90 C

 5.5. Size:52K  ixys
 ixgh24n60c.pdf

IXGH 24N60C VCES = 600 V HiPerFASTTM IGBT IXGT 24N60C IC25 = 48 A LightspeedTM Series VCE(sat)typ = 2.1 V tfi typ = 60 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 MW 600 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V IC25 TC = 25 C48 A TO-247 AD (IXGH) IC110 TC = 110