IXGH24N60BU1 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: IXGH24N60BU1
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 150 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 48 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.5(max) V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 15 nS
Coesⓘ - Выходная емкость, типовая: 175 pF
Тип корпуса: TO247
Аналог (замена) для IXGH24N60BU1
IXGH24N60BU1 Datasheet (PDF)
ixgh24n50bu1 ixgh24n60bu1.pdf
VCES IC(25) VCE(sat) tfiHiPerFASTTM IGBT500 V 48 A 2.3 V 80 nsIXGH24N50BU1with Diode600 V 48 A 2.5 V 80 nsIXGH24N60BU1Combi PackPreliminary dataTO-247 ADSymbol Test Conditions Maximum Ratings24N50 24N60C (TAB)VCES TJ = 25 C to 150 C 500 600 VGVCGR TJ = 25 C to 150 C; RGE = 1 M 500 600 V CEVGES Continuous 20 VVGEM Transient 30 VG = Gate, C = Collector,E
ixgh24n60b.pdf
IXGH 24N60B VCES = 600 VHiPerFASTTM IGBTIC25 = 48 AVCE(sat) = 2.3 Vtfi = 80 nsPreliminary DataTO-247 ADSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VVGES Continuous 20 VVGEM Transient 30 VC (TAB)GIC25 TC = 25C48 ACEIC90 TC = 90C24 AG = Gate, C = Collector,ICM TC = 25C, 1 ms 96 A
ixgh24n50b ixgh24n60b.pdf
VCES IC(25) VCE(sat) tfiHiPerFASTTM IGBTIXGH24N50B 500 V 48 A 2.3 V 80 ns600 V 48 A 2.5 V 80 nsIXGH24N60BPreliminary dataSymbol Test Conditions Maximum RatingsTO-247 AD24N50 24N60VCES TJ = 25 C to 150 C 500 600 VVCGR TJ = 25 C to 150 C; RGE = 1 M 500 600 VC (TAB)VGES Continuous 20 VGVGEM Transient 30 V CEIC25 TC = 25 C48 AG = Gate, C = Collector,IC90 TC = 9
ixgh24n60cd1.pdf
IXGH 24N60CD1 VCES = 600 VHiPerFASTTM IGBTIXGT 24N60CD1 IC25 = 48 Awith Diode VCE(sat) = 2.5 VLightspeed SeriesPreliminary dataTO-268Symbol Test Conditions Maximum Ratings(IXGT)VCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 MW 600 VGVGES Continuous 20 V E C (TAB)VGEM Transient 30 VIC25 TC = 25C48 ATO-247 AD(IXGH)IC110 TC = 110C24 A
ixgh24n60c4d1.pdf
VCES = 600V High-Gain IGBT IXGH24N60C4D1 IC110 = 24A w/ Diode VCE(sat) 2.70V tfi(typ) = 68ns High-Speed PT Trench IGBT TO-247 AD Symbol Test Conditions Maximum Ratings G VCES TJ = 25C to 150C 600 V C Tab E VCGR TJ = 25C to 150C, RGE = 1M 600 V VGES Continuous 20 V G = Gate C = Collector VGEM Transient 30 V E = Emitter
ixgh24n60c4.pdf
Advance Technical InformationHigh-Gain IGBTs VCES = 600VIXGP24N60C4IC110 = 24AIXGH24N60C4 VCE(sat) 2.70V tfi(typ) = 68nsHigh-Speed PT Trench IGBTsTO-220AB (IXGP)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VGCTabVCGR TJ = 25C to 150C, RGE = 1M 600 VEVGES Continuous 20 VVGEM Transient 30 VTO-247 AD (IX
ixgh24n60aui.pdf
VCES = 600 VIXGH 24N60AU1HiPerFASTTMIC25 = 48 AIXGH 24N60AU1SIGBT with DiodeVCE(sat) = 2.7 VCombi Packtfi = 275 nsTO-247 SMD(24N60AU1S)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 600 VVCGR TJ = 25C to 150C; RGE = 1 M 600 VG C (TAB)EVGES Continuous 20 VVGEM Transient 30 VTO-247 ADIC25 TC = 25C48 A(24N60AU1)IC90 TC = 90C
ixgh24n60c.pdf
IXGH 24N60C VCES = 600 VHiPerFASTTM IGBTIXGT 24N60C IC25 = 48 ALightspeedTM SeriesVCE(sat)typ = 2.1 Vtfi typ = 60 nsPreliminary dataSymbol Test Conditions Maximum Ratings TO-268(IXGT)VCES TJ = 25C to 150C 600 VGVCGR TJ = 25C to 150C; RGE = 1 MW 600 VC (TAB)EVGES Continuous 20 VVGEM Transient 30 VIC25 TC = 25C48 ATO-247 AD(IXGH)IC110 TC = 110
Другие IGBT... IXGH20N60B , IXGH20N60BD1 , IXGH22N50B , IXGH22N50BU1 , IXGH22N50C , IXGH24N50B , IXGH24N50BU1 , IXGH24N60B , GT30G124 , IXGH24N60C , IXGH24N60CD1 , IXGH25N100 , IXGH25N100A , IXGH25N100AU1 , IXGH25N100U1 , IXGH25N120 , IXGH28N30 .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2