IKA10N65ET6 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKA10N65ET6
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 32.5
Tensión máxima colector-emisor |Vce|, V: 650
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 25
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.5
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 18
Capacitancia de salida (Cc), typ, pF: 41
Paquete / Cubierta: TO220F
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IKA10N65ET6 Datasheet (PDF)
ika10n65et6.pdf
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IKA10N65ET6TRENCHSTOP IGBT6IGBT in trench and field-stop technology with soft, fast recovery anti-parallelRapid diodeCFeatures and Benefits: Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175C Short circuit withstand time 3sTrench and field-stop technology for 650V applications offers :G very tight parameter distributionE high rugg
ika10n60t.pdf
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IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s GE Designed for : - Variable Speed Drive for washing machines, air conditioners and induction cooking - U
ika10n60trev2 3g.pdf
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IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s G E TrenchStop and Fieldstop technology for 600 V applications offers : - very tigh
Otros transistores... IHW25N120E1 , IHW30N120R5 , IHW30N135R5 , IHW30N160R5 , IHW30N65R5 , IHW40N120R5 , IHW40N135R5 , IKA08N65ET6 , STGP19NC60KD , IKA15N65ET6 , IKB15N65EH5 , IKB20N65EH5 , IKB30N65EH5 , IKB30N65ES5 , IKB40N65EF5 , IKB40N65EH5 , IKB40N65ES5 .
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