IKA10N65ET6 Todos los transistores

 

IKA10N65ET6 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IKA10N65ET6
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 32.5 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 25 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 18 nS
   Coesⓘ - Capacitancia de salida, typ: 41 pF
   Paquete / Cubierta: TO220F
     - Selección de transistores por parámetros

 

IKA10N65ET6 Datasheet (PDF)

 ..1. Size:3303K  infineon
ika10n65et6.pdf pdf_icon

IKA10N65ET6

IKA10N65ET6TRENCHSTOP IGBT6IGBT in trench and field-stop technology with soft, fast recovery anti-parallelRapid diodeCFeatures and Benefits: Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175C Short circuit withstand time 3sTrench and field-stop technology for 650V applications offers :G very tight parameter distributionE high rugg

 7.1. Size:368K  infineon
ika10n60t.pdf pdf_icon

IKA10N65ET6

IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s GE Designed for : - Variable Speed Drive for washing machines, air conditioners and induction cooking - U

 7.2. Size:841K  infineon
ika10n60trev2 3g.pdf pdf_icon

IKA10N65ET6

IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s G E TrenchStop and Fieldstop technology for 600 V applications offers : - very tigh

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