IKA10N65ET6 Specs and Replacement
Type Designator: IKA10N65ET6
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 32.5 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 25 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
tr ⓘ - Rise Time, typ: 18 nS
Coesⓘ - Output Capacitance, typ: 41 pF
Package: TO220F
IKA10N65ET6 Substitution - IGBTⓘ Cross-Reference Search
IKA10N65ET6 datasheet
ika10n65et6.pdf
IKA10N65ET6 TRENCHSTOP IGBT6 IGBT in trench and field-stop technology with soft, fast recovery anti-parallel Rapid diode C Features and Benefits Very low V 1.5V (typ.) CE(sat) Maximum junction temperature 175 C Short circuit withstand time 3 s Trench and field-stop technology for 650V applications offers G very tight parameter distribution E high rugg... See More ⇒
ika10n60t.pdf
IKA10N60T TrenchStop Series Low Loss DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G E Designed for - Variable Speed Drive for washing machines, air conditioners and induction cooking - U... See More ⇒
ika10n60trev2 3g.pdf
IKA10N60T TrenchStop Series Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G E TrenchStop and Fieldstop technology for 600 V applications offers - very tigh... See More ⇒
Specs: IHW25N120E1, IHW30N120R5, IHW30N135R5, IHW30N160R5, IHW30N65R5, IHW40N120R5, IHW40N135R5, IKA08N65ET6, GT30G122, IKA15N65ET6, IKB15N65EH5, IKB20N65EH5, IKB30N65EH5, IKB30N65ES5, IKB40N65EF5, IKB40N65EH5, IKB40N65ES5
Keywords - IKA10N65ET6 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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