All IGBT. IKA10N65ET6 Datasheet

 

IKA10N65ET6 Datasheet and Replacement


   Type Designator: IKA10N65ET6
   Type: IGBT + Anti-Parallel Diode
   Marking Code: K10EET6
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 32.5 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 25 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 18 nS
   Coesⓘ - Output Capacitance, typ: 41 pF
   Qgⓘ - Total Gate Charge, typ: 27 nC
   Package: TO220F
      - IGBT Cross-Reference

 

IKA10N65ET6 Datasheet (PDF)

 ..1. Size:3303K  infineon
ika10n65et6.pdf pdf_icon

IKA10N65ET6

IKA10N65ET6TRENCHSTOP IGBT6IGBT in trench and field-stop technology with soft, fast recovery anti-parallelRapid diodeCFeatures and Benefits: Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175C Short circuit withstand time 3sTrench and field-stop technology for 650V applications offers :G very tight parameter distributionE high rugg

 7.1. Size:368K  infineon
ika10n60t.pdf pdf_icon

IKA10N65ET6

IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s GE Designed for : - Variable Speed Drive for washing machines, air conditioners and induction cooking - U

 7.2. Size:841K  infineon
ika10n60trev2 3g.pdf pdf_icon

IKA10N65ET6

IKA10N60T TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode Features C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s G E TrenchStop and Fieldstop technology for 600 V applications offers : - very tigh

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History: MMG300D120B6TC

Keywords - IKA10N65ET6 transistor datasheet

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