IKFW50N60DH3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKFW50N60DH3
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 145 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 53 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
trⓘ - Tiempo de subida, typ: 35 nS
Coesⓘ - Capacitancia de salida, typ: 94 pF
Encapsulados: TO247
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IKFW50N60DH3 datasheet
ikfw50n60dh3.pdf
IKFW50N60DH3 TRENCHSTOPTM Advanced Isolation High speed switching series third generation IGBT copacked with Rapid 1 fast and soft antiparallel diode in fully isolated package C Features TRENCHSTOP technology offers Short circuit withstand time 5 s at T = 175 C vj Positive temperature coefficient in V CE(sat) Low EMI G Very soft, fast recovery anti-parallel
ikfw50n60dh3e.pdf
IKFW50N60DH3E TRENCHSTOPTM Advanced Isolation High speed switching series third generation IGBT copacked with Rapid 1 fast and soft antiparallel diode in fully isolated package C Features TRENCHSTOP technology offers Short circuit withstand time 5 s at T = 175 C vj Positive temperature coefficient in V CE(sat) Low EMI G Very soft, fast recovery anti-parallel
ikfw50n60et.pdf
IKFW50N60ET TRENCHSTOPTM Advanced Isolation TRENCHSTOPTM IGBT copacked with Rapid 1 fast and soft antiparallel diode in fully isolated package C Features TRENCHSTOP technology offers Very low V CE(sat) Short circuit withstand time 5 s at T = 175 C vj Positive temperature coefficient in V CE(sat) G Low EMI E Very soft, fast recovery anti-parallel diode
ikfw50n65dh5.pdf
IKFW50N65DH5 TRENCHSTOPTM 5 Advanced Isolation High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode in fully isolated package C Features and Benefits TRENCHSTOPTM 5 technology offering Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs G 650V breakdown
Otros transistores... IKB30N65EH5 , IKB30N65ES5 , IKB40N65EF5 , IKB40N65EH5 , IKB40N65ES5 , IKD06N60RF , IKD15N60RC2 , IKFW40N60DH3E , BT60T60ANFK , IKFW50N60DH3E , IKFW50N60ET , IKFW50N65DH5 , IKFW60N60DH3E , IKFW60N60EH3 , IKFW75N60ET , IKFW90N60EH3 , IKFW90N65ES5 .
History: IKFW50N65DH5 | MIXA150Q1200VA
History: IKFW50N65DH5 | MIXA150Q1200VA
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