IKFW50N60DH3E Todos los transistores

 

IKFW50N60DH3E - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IKFW50N60DH3E
   Tipo de transistor: IGBT + Diode
   Código de marcado: K50DDH3E
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 130 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.7 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 39 nS
   Coesⓘ - Capacitancia de salida, typ: 73 pF
   Qgⓘ - Carga total de la puerta, typ: 160 nC
   Paquete / Cubierta: TO247
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IKFW50N60DH3E Datasheet (PDF)

 ..1. Size:2000K  infineon
ikfw50n60dh3e.pdf pdf_icon

IKFW50N60DH3E

IKFW50N60DH3ETRENCHSTOPTM Advanced IsolationHigh speed switching series third generation IGBT copacked with Rapid 1fast and soft antiparallel diode in fully isolated packageCFeatures:TRENCHSTOP technology offers : Short circuit withstand time 5s at T = 175Cvj Positive temperature coefficient in VCE(sat) Low EMIG Very soft, fast recovery anti-parallel

 2.1. Size:2005K  infineon
ikfw50n60dh3.pdf pdf_icon

IKFW50N60DH3E

IKFW50N60DH3TRENCHSTOPTM Advanced IsolationHigh speed switching series third generation IGBT copacked with Rapid 1fast and soft antiparallel diode in fully isolated packageCFeatures:TRENCHSTOP technology offers : Short circuit withstand time 5s at T = 175Cvj Positive temperature coefficient in VCE(sat) Low EMIG Very soft, fast recovery anti-parallel

 5.1. Size:2023K  infineon
ikfw50n60et.pdf pdf_icon

IKFW50N60DH3E

IKFW50N60ETTRENCHSTOPTM Advanced IsolationTRENCHSTOPTM IGBT copacked with Rapid 1 fast and soft antiparallel diodein fully isolated packageCFeatures:TRENCHSTOP technology offers : Very low VCE(sat) Short circuit withstand time 5s at T = 175Cvj Positive temperature coefficient in VCE(sat)G Low EMIE Very soft, fast recovery anti-parallel diode

 6.1. Size:1366K  infineon
ikfw50n65dh5.pdf pdf_icon

IKFW50N60DH3E

IKFW50N65DH5TRENCHSTOPTM 5 Advanced IsolationHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diode in fully isolated packageCFeatures and Benefits:TRENCHSTOPTM 5 technology offering Best-in-Class efficiency in hard switching and resonanttopologies Plug and play replacement of previous generation IGBTsG 650V breakdown

Otros transistores... IKB30N65ES5 , IKB40N65EF5 , IKB40N65EH5 , IKB40N65ES5 , IKD06N60RF , IKD15N60RC2 , IKFW40N60DH3E , IKFW50N60DH3 , IRG4PH50UD , IKFW50N60ET , IKFW50N65DH5 , IKFW60N60DH3E , IKFW60N60EH3 , IKFW75N60ET , IKFW90N60EH3 , IKFW90N65ES5 , IKP20N60TA .

History: IXGT50N60B | APT68GA60LD40 | SGP40N60UF | APT35GP120B2DQ2G | 1MB05-120

 

 
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