IKFW50N60DH3E Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IKFW50N60DH3E  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 130 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃

trⓘ - Tiempo de subida, typ: 39 nS

Coesⓘ - Capacitancia de salida, typ: 73 pF

Encapsulados: TO247

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IKFW50N60DH3E datasheet

 ..1. Size:2000K  infineon
ikfw50n60dh3e.pdf pdf_icon

IKFW50N60DH3E

IKFW50N60DH3E TRENCHSTOPTM Advanced Isolation High speed switching series third generation IGBT copacked with Rapid 1 fast and soft antiparallel diode in fully isolated package C Features TRENCHSTOP technology offers Short circuit withstand time 5 s at T = 175 C vj Positive temperature coefficient in V CE(sat) Low EMI G Very soft, fast recovery anti-parallel

 2.1. Size:2005K  infineon
ikfw50n60dh3.pdf pdf_icon

IKFW50N60DH3E

IKFW50N60DH3 TRENCHSTOPTM Advanced Isolation High speed switching series third generation IGBT copacked with Rapid 1 fast and soft antiparallel diode in fully isolated package C Features TRENCHSTOP technology offers Short circuit withstand time 5 s at T = 175 C vj Positive temperature coefficient in V CE(sat) Low EMI G Very soft, fast recovery anti-parallel

 5.1. Size:2023K  infineon
ikfw50n60et.pdf pdf_icon

IKFW50N60DH3E

IKFW50N60ET TRENCHSTOPTM Advanced Isolation TRENCHSTOPTM IGBT copacked with Rapid 1 fast and soft antiparallel diode in fully isolated package C Features TRENCHSTOP technology offers Very low V CE(sat) Short circuit withstand time 5 s at T = 175 C vj Positive temperature coefficient in V CE(sat) G Low EMI E Very soft, fast recovery anti-parallel diode

 6.1. Size:1366K  infineon
ikfw50n65dh5.pdf pdf_icon

IKFW50N60DH3E

IKFW50N65DH5 TRENCHSTOPTM 5 Advanced Isolation High speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode in fully isolated package C Features and Benefits TRENCHSTOPTM 5 technology offering Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs G 650V breakdown

Otros transistores... IKB30N65ES5, IKB40N65EF5, IKB40N65EH5, IKB40N65ES5, IKD06N60RF, IKD15N60RC2, IKFW40N60DH3E, IKFW50N60DH3, XNF15N60T, IKFW50N60ET, IKFW50N65DH5, IKFW60N60DH3E, IKFW60N60EH3, IKFW75N60ET, IKFW90N60EH3, IKFW90N65ES5, IKP20N60TA