IKFW50N60DH3E Даташит. Аналоги. Параметры и характеристики.
Наименование: IKFW50N60DH3E
Тип транзистора: IGBT + Diode
Маркировка: K50DDH3E
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 130 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 40 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.2 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.7 V
Tj ⓘ - Максимальная температура перехода: 175 ℃
tr ⓘ - Время нарастания типовое: 39 nS
Coesⓘ - Выходная емкость, типовая: 73 pF
Qg ⓘ - Общий заряд затвора, typ: 160 nC
Тип корпуса: TO247
Аналог (замена) для IKFW50N60DH3E
IKFW50N60DH3E Datasheet (PDF)
ikfw50n60dh3e.pdf

IKFW50N60DH3ETRENCHSTOPTM Advanced IsolationHigh speed switching series third generation IGBT copacked with Rapid 1fast and soft antiparallel diode in fully isolated packageCFeatures:TRENCHSTOP technology offers : Short circuit withstand time 5s at T = 175Cvj Positive temperature coefficient in VCE(sat) Low EMIG Very soft, fast recovery anti-parallel
ikfw50n60dh3.pdf

IKFW50N60DH3TRENCHSTOPTM Advanced IsolationHigh speed switching series third generation IGBT copacked with Rapid 1fast and soft antiparallel diode in fully isolated packageCFeatures:TRENCHSTOP technology offers : Short circuit withstand time 5s at T = 175Cvj Positive temperature coefficient in VCE(sat) Low EMIG Very soft, fast recovery anti-parallel
ikfw50n60et.pdf

IKFW50N60ETTRENCHSTOPTM Advanced IsolationTRENCHSTOPTM IGBT copacked with Rapid 1 fast and soft antiparallel diodein fully isolated packageCFeatures:TRENCHSTOP technology offers : Very low VCE(sat) Short circuit withstand time 5s at T = 175Cvj Positive temperature coefficient in VCE(sat)G Low EMIE Very soft, fast recovery anti-parallel diode
ikfw50n65dh5.pdf

IKFW50N65DH5TRENCHSTOPTM 5 Advanced IsolationHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diode in fully isolated packageCFeatures and Benefits:TRENCHSTOPTM 5 technology offering Best-in-Class efficiency in hard switching and resonanttopologies Plug and play replacement of previous generation IGBTsG 650V breakdown
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: 2MBI200SB-120 | SKM200GAL123D | IXGA42N30C3 | IXGH50N60B2 | STGD10NC60KDT4
History: 2MBI200SB-120 | SKM200GAL123D | IXGA42N30C3 | IXGH50N60B2 | STGD10NC60KDT4



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