IKFW60N60EH3 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKFW60N60EH3
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 164 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 64 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 37 nS
Coesⓘ - Capacitancia de salida, typ: 150 pF
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IKFW60N60EH3 IGBT
IKFW60N60EH3 datasheet
ikfw60n60eh3.pdf
IKFW60N60EH3 TRENCHSTOPTM Advanced Isolation High speed switching series third generation IGBT copacked with Rapid 1 fast and soft antiparallel diode in fully isolated package C Features TRENCHSTOP technology offers Low V CE(sat) Short circuit withstand time 5 s at T = 175 C vj Positive temperature coefficient in V CE(sat) G Low EMI E Very soft, fast
ikfw60n60dh3e.pdf
IKFW60N60DH3E TRENCHSTOPTM Advanced Isolation High speed switching series third generation IGBT copacked with Rapid 1 fast and soft antiparallel diode in fully isolated package C Features TRENCHSTOP technology offers Short circuit withstand time 5 s at T = 175 C vj Positive temperature coefficient in V CE(sat) Low EMI G Very soft, fast recovery anti-parallel
Otros transistores... IKD06N60RF , IKD15N60RC2 , IKFW40N60DH3E , IKFW50N60DH3 , IKFW50N60DH3E , IKFW50N60ET , IKFW50N65DH5 , IKFW60N60DH3E , TGAN40N60FD , IKFW75N60ET , IKFW90N60EH3 , IKFW90N65ES5 , IKP20N60TA , IKP28N65ES5 , IKP39N65ES5 , IKP40N65H5 , IKW40N65H5 .
History: IXGX60N60B2D1
History: IXGX60N60B2D1
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