IKFW60N60EH3 Todos los transistores

 

IKFW60N60EH3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IKFW60N60EH3
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 164 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 64 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 37 nS
   Coesⓘ - Capacitancia de salida, typ: 150 pF
   Paquete / Cubierta: TO247
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IKFW60N60EH3 Datasheet (PDF)

 ..1. Size:2008K  infineon
 ikfw60n60eh3.pdf pdf_icon

IKFW60N60EH3

IKFW60N60EH3TRENCHSTOPTM Advanced IsolationHigh speed switching series third generation IGBT copacked with Rapid 1fast and soft antiparallel diode in fully isolated packageCFeatures:TRENCHSTOP technology offers : Low VCE(sat) Short circuit withstand time 5s at T = 175Cvj Positive temperature coefficient in VCE(sat)G Low EMIE Very soft, fast

 5.1. Size:2002K  infineon
 ikfw60n60dh3e.pdf pdf_icon

IKFW60N60EH3

IKFW60N60DH3ETRENCHSTOPTM Advanced IsolationHigh speed switching series third generation IGBT copacked with Rapid 1fast and soft antiparallel diode in fully isolated packageCFeatures:TRENCHSTOP technology offers : Short circuit withstand time 5s at T = 175Cvj Positive temperature coefficient in VCE(sat) Low EMIG Very soft, fast recovery anti-parallel

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IXGH60N60C3 | NCE15TD120BT | NCE07TD60BK

 

 
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History: IXGH60N60C3 | NCE15TD120BT | NCE07TD60BK

IKFW60N60EH3   IKFW60N60EH3   IKFW60N60EH3  

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