IKFW90N60EH3 Todos los transistores

 

IKFW90N60EH3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IKFW90N60EH3
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 178 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 77 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 45 nS
   Coesⓘ - Capacitancia de salida, typ: 215 pF
   Paquete / Cubierta: TO247
 

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IKFW90N60EH3 Datasheet (PDF)

 ..1. Size:2009K  infineon
 ikfw90n60eh3.pdf pdf_icon

IKFW90N60EH3

IKFW90N60EH3TRENCHSTOPTM Advanced IsolationHigh speed switching series third generation IGBT copacked with Rapid 1fast and soft antiparallel diode in fully isolated packageCFeatures:TRENCHSTOP technology offers : Low VCE(sat) Short circuit withstand time 5s at T = 175Cvj Positive temperature coefficient in VCE(sat)G Low EMIE Very soft, fast

 6.1. Size:1370K  infineon
 ikfw90n65es5.pdf pdf_icon

IKFW90N60EH3

IKFW90N65ES5TRENCHSTOPTM 5 Advanced IsolationTRENCHSTOPTM 5 high speed soft switching IGBT copacked with full currentrated RAPID 1 fast and soft antiparallel diodeCFeatures and Benefits:TRENCHSTOPTM 5 technology offering Best-in-Class efficiency in hard switching and resonanttopologies Plug and play replacement of previous generation IGBTsG 650V breakdown voltage

Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: IGB15N65S5 | NGTB40N135IHR | MMG50J120UZ | IHW40N65R5 | IXGN50N120C3H1 | MMG200DR060B | SM2G100US60

 

 
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