IKFW90N60EH3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IKFW90N60EH3  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 178 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 77 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃

trⓘ - Tiempo de subida, typ: 45 nS

Coesⓘ - Capacitancia de salida, typ: 215 pF

Encapsulados: TO247

  📄📄 Copiar 

 Búsqueda de reemplazo de IKFW90N60EH3 IGBT

- Selecciónⓘ de transistores por parámetros

 

IKFW90N60EH3 datasheet

 ..1. Size:2009K  infineon
 ikfw90n60eh3.pdf pdf_icon

IKFW90N60EH3

IKFW90N60EH3 TRENCHSTOPTM Advanced Isolation High speed switching series third generation IGBT copacked with Rapid 1 fast and soft antiparallel diode in fully isolated package C Features TRENCHSTOP technology offers Low V CE(sat) Short circuit withstand time 5 s at T = 175 C vj Positive temperature coefficient in V CE(sat) G Low EMI E Very soft, fast

 6.1. Size:1370K  infineon
 ikfw90n65es5.pdf pdf_icon

IKFW90N60EH3

IKFW90N65ES5 TRENCHSTOPTM 5 Advanced Isolation TRENCHSTOPTM 5 high speed soft switching IGBT copacked with full current rated RAPID 1 fast and soft antiparallel diode C Features and Benefits TRENCHSTOPTM 5 technology offering Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs G 650V breakdown voltage

Otros transistores... IKFW40N60DH3E, IKFW50N60DH3, IKFW50N60DH3E, IKFW50N60ET, IKFW50N65DH5, IKFW60N60DH3E, IKFW60N60EH3, IKFW75N60ET, KGF75N65KDF, IKFW90N65ES5, IKP20N60TA, IKP28N65ES5, IKP39N65ES5, IKP40N65H5, IKW40N65H5, IKQ100N60T, IKQ120N60T