IKFW90N60EH3 Specs and Replacement
Type Designator: IKFW90N60EH3
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 178 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 77 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
tr ⓘ - Rise Time, typ: 45 nS
Coesⓘ - Output Capacitance, typ: 215 pF
Package: TO247
IKFW90N60EH3 Substitution - IGBTⓘ Cross-Reference Search
IKFW90N60EH3 datasheet
ikfw90n60eh3.pdf
IKFW90N60EH3 TRENCHSTOPTM Advanced Isolation High speed switching series third generation IGBT copacked with Rapid 1 fast and soft antiparallel diode in fully isolated package C Features TRENCHSTOP technology offers Low V CE(sat) Short circuit withstand time 5 s at T = 175 C vj Positive temperature coefficient in V CE(sat) G Low EMI E Very soft, fast ... See More ⇒
ikfw90n65es5.pdf
IKFW90N65ES5 TRENCHSTOPTM 5 Advanced Isolation TRENCHSTOPTM 5 high speed soft switching IGBT copacked with full current rated RAPID 1 fast and soft antiparallel diode C Features and Benefits TRENCHSTOPTM 5 technology offering Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs G 650V breakdown voltage ... See More ⇒
Specs: IKFW40N60DH3E, IKFW50N60DH3, IKFW50N60DH3E, IKFW50N60ET, IKFW50N65DH5, IKFW60N60DH3E, IKFW60N60EH3, IKFW75N60ET, KGF75N65KDF, IKFW90N65ES5, IKP20N60TA, IKP28N65ES5, IKP39N65ES5, IKP40N65H5, IKW40N65H5, IKQ100N60T, IKQ120N60T
Keywords - IKFW90N60EH3 transistor spec
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History: IGC50T120T6RL | IKP40N65H5
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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