IKFW90N60EH3 Datasheet and Replacement
Type Designator: IKFW90N60EH3
Type: IGBT + Anti-Parallel Diode
Marking Code: K90DEH3
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 178 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 77 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 45 nS
Coesⓘ - Output Capacitance, typ: 215 pF
Qg ⓘ - Total Gate Charge, typ: 440 nC
Package: TO247
IKFW90N60EH3 substitution
IKFW90N60EH3 Datasheet (PDF)
ikfw90n60eh3.pdf

IKFW90N60EH3TRENCHSTOPTM Advanced IsolationHigh speed switching series third generation IGBT copacked with Rapid 1fast and soft antiparallel diode in fully isolated packageCFeatures:TRENCHSTOP technology offers : Low VCE(sat) Short circuit withstand time 5s at T = 175Cvj Positive temperature coefficient in VCE(sat)G Low EMIE Very soft, fast
ikfw90n65es5.pdf

IKFW90N65ES5TRENCHSTOPTM 5 Advanced IsolationTRENCHSTOPTM 5 high speed soft switching IGBT copacked with full currentrated RAPID 1 fast and soft antiparallel diodeCFeatures and Benefits:TRENCHSTOPTM 5 technology offering Best-in-Class efficiency in hard switching and resonanttopologies Plug and play replacement of previous generation IGBTsG 650V breakdown voltage
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: SM2G100US60 | STGW20V60F | APT15GT60BRG | MMIX1X200N60B3 | DIM600DCM17-A | NCE80TD60BT | OST75N65HSXF
Keywords - IKFW90N60EH3 transistor datasheet
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History: SM2G100US60 | STGW20V60F | APT15GT60BRG | MMIX1X200N60B3 | DIM600DCM17-A | NCE80TD60BT | OST75N65HSXF



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