IKFW90N60EH3 Datasheet and Replacement
Type Designator: IKFW90N60EH3
Type: IGBT + Anti-Parallel Diode
Marking Code: K90DEH3
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 178 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 77 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 45 nS
Coesⓘ - Output Capacitance, typ: 215 pF
Qgⓘ - Total Gate Charge, typ: 440 nC
Package: TO247
- IGBT Cross-Reference
IKFW90N60EH3 Datasheet (PDF)
ikfw90n60eh3.pdf

IKFW90N60EH3TRENCHSTOPTM Advanced IsolationHigh speed switching series third generation IGBT copacked with Rapid 1fast and soft antiparallel diode in fully isolated packageCFeatures:TRENCHSTOP technology offers : Low VCE(sat) Short circuit withstand time 5s at T = 175Cvj Positive temperature coefficient in VCE(sat)G Low EMIE Very soft, fast
ikfw90n65es5.pdf

IKFW90N65ES5TRENCHSTOPTM 5 Advanced IsolationTRENCHSTOPTM 5 high speed soft switching IGBT copacked with full currentrated RAPID 1 fast and soft antiparallel diodeCFeatures and Benefits:TRENCHSTOPTM 5 technology offering Best-in-Class efficiency in hard switching and resonanttopologies Plug and play replacement of previous generation IGBTsG 650V breakdown voltage
Datasheet: IKFW40N60DH3E , IKFW50N60DH3 , IKFW50N60DH3E , IKFW50N60ET , IKFW50N65DH5 , IKFW60N60DH3E , IKFW60N60EH3 , IKFW75N60ET , IHW20N120R2 , IKFW90N65ES5 , IKP20N60TA , IKP28N65ES5 , IKP39N65ES5 , IKP40N65H5 , IKW40N65H5 , IKQ100N60T , IKQ120N60T .
History: HGT1S3N60A4DS | IXGP12N100U1 | SGB10N60A | IXGH50N60B | IXGR16N170AH1 | SKB15N60 | IXGT32N60CD1
Keywords - IKFW90N60EH3 transistor datasheet
IKFW90N60EH3 cross reference
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History: HGT1S3N60A4DS | IXGP12N100U1 | SGB10N60A | IXGH50N60B | IXGR16N170AH1 | SKB15N60 | IXGT32N60CD1



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