IKP20N60TA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKP20N60TA 📄📄
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 156 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃
trⓘ - Tiempo de subida, typ: 14 nS
Coesⓘ - Capacitancia de salida, typ: 71 pF
Encapsulados: TO220
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IKP20N60TA datasheet
ikp20n60t ikb20n60t ikw20n60t.pdf
IKP20N60T, IKB20N60T TrenchStop Series IKW20N60T Low Loss DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G E Designed for - Frequency Converters - Uninterrupted Power Supply Trench and F
ikp20n60t.pdf
IKP20N60T TRENCHSTOP Series Low Loss DuoPack IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C G Short circuit withstand time 5 s E Designed for - Frequency Converters - Uninterrupted Power Supply
ikp20n60t ikw20n60t rev2 5g.pdf
IKP20N60T TrenchStop Series IKW20N60T Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G E Designed for - Frequency Converters - Uninterrupted Power Supply TrenchStop an
Otros transistores... IKFW50N60DH3E, IKFW50N60ET, IKFW50N65DH5, IKFW60N60DH3E, IKFW60N60EH3, IKFW75N60ET, IKFW90N60EH3, IKFW90N65ES5, IRG7S313U, IKP28N65ES5, IKP39N65ES5, IKP40N65H5, IKW40N65H5, IKQ100N60T, IKQ120N60T, IKQ40N120CH3, IKQ40N120CT2
History: IRG4BC20KDPBF | APTGF660U60D4
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