IKP20N60TA Specs and Replacement
Type Designator: IKP20N60TA
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 156 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
tr ⓘ - Rise Time, typ: 14 nS
Coesⓘ - Output Capacitance, typ: 71 pF
Package: TO220
IKP20N60TA Substitution - IGBTⓘ Cross-Reference Search
IKP20N60TA datasheet
ikp20n60t ikb20n60t ikw20n60t.pdf
IKP20N60T, IKB20N60T TrenchStop Series IKW20N60T Low Loss DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G E Designed for - Frequency Converters - Uninterrupted Power Supply Trench and F... See More ⇒
ikp20n60t.pdf
IKP20N60T TRENCHSTOP Series Low Loss DuoPack IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Features Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C G Short circuit withstand time 5 s E Designed for - Frequency Converters - Uninterrupted Power Supply ... See More ⇒
ikp20n60t ikw20n60t rev2 5g.pdf
IKP20N60T TrenchStop Series IKW20N60T Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G E Designed for - Frequency Converters - Uninterrupted Power Supply TrenchStop an... See More ⇒
Specs: IKFW50N60DH3E, IKFW50N60ET, IKFW50N65DH5, IKFW60N60DH3E, IKFW60N60EH3, IKFW75N60ET, IKFW90N60EH3, IKFW90N65ES5, IRG7S313U, IKP28N65ES5, IKP39N65ES5, IKP40N65H5, IKW40N65H5, IKQ100N60T, IKQ120N60T, IKQ40N120CH3, IKQ40N120CT2
Keywords - IKP20N60TA transistor spec
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History: APT50GP60J
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