IKQ100N60T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IKQ100N60T  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 714 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 160 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃

trⓘ - Tiempo de subida, typ: 38 nS

Coesⓘ - Capacitancia de salida, typ: 360 pF

Encapsulados: TO247

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IKQ100N60T datasheet

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IKQ100N60T

IKQ100N60T TRENCHSTOPTM series Low Loss DuoPack IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled diode C Features Very low V 1.5V (typ.) CE(sat) Maximum junction temperature 175 C Short circuit withstand time 5 s G TRENCHSTOPTM and Fieldstop technology for 600V E applications offers - very tight parameter

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IKQ100N60T

IGBT Low Loss DuoPack IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode IKQ100N60TA 600V low loss switching series third generation Data sheet Industrial Power Control IKQ100N60TA TRENCHSTOPTM series Low Loss DuoPack IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled di

 5.1. Size:1940K  infineon
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IKQ100N60T

AIKQ100N60CT TRENCHSTOPTM Series Low Loss DuoPack IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode C Features Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.) CE(sat) Maximum junction temperature 175 C G Dynamically stress tested E Sho

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