IKQ120N60T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IKQ120N60T  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 833 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 160 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.5 V @25℃

trⓘ - Tiempo de subida, typ: 43 nS

Coesⓘ - Capacitancia de salida, typ: 446 pF

Encapsulados: TO247

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IKQ120N60T datasheet

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IKQ120N60T

IKQ120N60T TRENCHSTOPTM series Low Loss DuoPack IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled diode C Features Very low V 1.5V (typ.) CE(sat) Maximum junction temperature 175 C Short circuit withstand time 5 s G TRENCHSTOPTM and Fieldstop technology for 600V E applications offers - very tight parameter

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IKQ120N60T

IGBT Low Loss DuoPack IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode IKQ120N60TA 600V low loss switching series third generation Data sheet Industrial Power Control IKQ120N60TA TRENCHSTOPTM series Low Loss DuoPack IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled di

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IKQ120N60T

AIKQ120N60CT TRENCHSTOPTM Series Low Loss DuoPack IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode C Features Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.) CE(sat) Maximum junction temperature 175 C G Dynamically stress tested E Sho

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