IKQ120N60T Todos los transistores

 

IKQ120N60T - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IKQ120N60T
   Tipo de transistor: IGBT + Diode
   Código de marcado: K120T60
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 833
   Tensión máxima colector-emisor |Vce|, V: 600
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 160
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.5
   Tensión máxima de puerta-umbral |VGE(th)|, V: 5.7
   Temperatura máxima de unión (Tj), ℃: 175
   Tiempo de subida (tr), typ, nS: 43
   Capacitancia de salida (Cc), typ, pF: 446
   Carga total de la puerta (Qg), typ, nC: 703
   Paquete / Cubierta: TO247

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IKQ120N60T Datasheet (PDF)

 ..1. Size:1911K  infineon
ikq120n60t.pdf

IKQ120N60T
IKQ120N60T

IKQ120N60TTRENCHSTOPTM seriesLow Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery anti-parallel Emitter Controlled diodeCFeatures: Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175C Short circuit withstand time 5sG TRENCHSTOPTM and Fieldstop technology for 600VEapplications offers:- very tight parameter

 0.1. Size:2196K  infineon
ikq120n60ta.pdf

IKQ120N60T
IKQ120N60T

IGBTLow Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diodeIKQ120N60TA600V low loss switching series third generationData sheetIndustrial Power ControlIKQ120N60TATRENCHSTOPTM seriesLow Loss DuoPack : IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled di

 5.1. Size:1926K  infineon
aikq120n60ct.pdf

IKQ120N60T
IKQ120N60T

AIKQ120N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled diodeCFeatures: Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175CG Dynamically stress testedE Sho

Otros transistores... IKFW90N60EH3 , IKFW90N65ES5 , IKP20N60TA , IKP28N65ES5 , IKP39N65ES5 , IKP40N65H5 , IKW40N65H5 , IKQ100N60T , GT30F124 , IKQ40N120CH3 , IKQ40N120CT2 , IKQ50N120CH3 , IKQ50N120CT2 , IKQ75N120CS6 , IKQ75N120CT2 , IKW15N120BH6 , IKW30N60DTP .

 

 
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