IKQ40N120CT2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKQ40N120CT2
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 500 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.75 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 43 nS
Coesⓘ - Capacitancia de salida, typ: 235 pF
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IKQ40N120CT2 - IGBT
IKQ40N120CT2 Datasheet (PDF)
ikq40n120ct2.pdf
IKQ40N120CT2TRENCHSTOPTM 2 low V second generation IGBTce(sat)Low V IGBT in TRENCHSTOP 2 technology copacked with soft, fastce(sat)recovery full current rated anti-parallel Emitter Controlled DiodeCFeatures:TRENCHSTOP 2 technology offers: Very low V , 1.75V at nominal currentCE(sat) 10sec short circuit withstand time at T =175Cvj Easy paralleling cap
ikq40n120ch3.pdf
IKQ40N120CH3High speed switching series third generation IGBTLow switching losses IGBT in Highspeed3 technology copacked with soft, fastrecovery full current rated anti-parallel Emitter Controlled diodeCFeatures:High speed H3 technology offers: High efficiency in hard switching and resonant topologies 10sec short circuit withstand time at T =175Cvj Easy parallel
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2