IKQ50N120CT2 Todos los transistores

 

IKQ50N120CT2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IKQ50N120CT2
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 652 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.75 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 46 nS
   Coesⓘ - Capacitancia de salida, typ: 355 pF
   Paquete / Cubierta: TO247
 

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IKQ50N120CT2 Datasheet (PDF)

 ..1. Size:1638K  infineon
 ikq50n120ct2.pdf pdf_icon

IKQ50N120CT2

IKQ50N120CT2TRENCHSTOPTM 2 low V second generation IGBTce(sat)Low V IGBT in TRENCHSTOP 2 technology copacked with soft, fastce(sat)recovery full current rated anti-parallel Emitter Controlled DiodeCFeatures:TRENCHSTOP 2 technology offers: Very low V , 1.75V at nominal currentCE(sat) 10sec short circuit withstand time at T =175Cvj Easy paralleling cap

 4.1. Size:1627K  infineon
 ikq50n120ch3.pdf pdf_icon

IKQ50N120CT2

IKQ50N120CH3High speed switching series third generation IGBTLow switching losses IGBT in Highspeed3 technology copacked with soft, fastrecovery full current rated anti-parallel Emitter Controlled diodeCFeatures:High speed H3 technology offers: High efficiency in hard switching and resonant topologies 10sec short circuit withstand time at T =175Cvj Easy parallel

Otros transistores... IKP39N65ES5 , IKP40N65H5 , IKW40N65H5 , IKQ100N60T , IKQ120N60T , IKQ40N120CH3 , IKQ40N120CT2 , IKQ50N120CH3 , GT50JR22 , IKQ75N120CS6 , IKQ75N120CT2 , IKW15N120BH6 , IKW30N60DTP , IKW30N65ES5 , IKW40N120CS6 , IKW40N60DTP , IKW40N65ES5 .

 

 
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