IKQ50N120CT2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IKQ50N120CT2  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 652 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.75 V @25℃

trⓘ - Tiempo de subida, typ: 46 nS

Coesⓘ - Capacitancia de salida, typ: 355 pF

Encapsulados: TO247

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IKQ50N120CT2 datasheet

 ..1. Size:1638K  infineon
 ikq50n120ct2.pdf pdf_icon

IKQ50N120CT2

IKQ50N120CT2 TRENCHSTOPTM 2 low V second generation IGBT ce(sat) Low V IGBT in TRENCHSTOP 2 technology copacked with soft, fast ce(sat) recovery full current rated anti-parallel Emitter Controlled Diode C Features TRENCHSTOP 2 technology offers Very low V , 1.75V at nominal current CE(sat) 10 sec short circuit withstand time at T =175 C vj Easy paralleling cap

 4.1. Size:1627K  infineon
 ikq50n120ch3.pdf pdf_icon

IKQ50N120CT2

IKQ50N120CH3 High speed switching series third generation IGBT Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode C Features High speed H3 technology offers High efficiency in hard switching and resonant topologies 10 sec short circuit withstand time at T =175 C vj Easy parallel

Otros transistores... IKP39N65ES5, IKP40N65H5, IKW40N65H5, IKQ100N60T, IKQ120N60T, IKQ40N120CH3, IKQ40N120CT2, IKQ50N120CH3, MBQ60T65PES, IKQ75N120CS6, IKQ75N120CT2, IKW15N120BH6, IKW30N60DTP, IKW30N65ES5, IKW40N120CS6, IKW40N60DTP, IKW40N65ES5