IKQ75N120CT2 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IKQ75N120CT2  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 938 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.75 V @25℃

trⓘ - Tiempo de subida, typ: 49 nS

Coesⓘ - Capacitancia de salida, typ: 505 pF

Encapsulados: TO247

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IKQ75N120CT2 datasheet

 ..1. Size:1622K  infineon
 ikq75n120ct2.pdf pdf_icon

IKQ75N120CT2

IKQ75N120CT2 TRENCHSTOPTM 2 low V second generation IGBT ce(sat) Low V IGBT in TRENCHSTOP 2 technology copacked with soft, fast ce(sat) recovery full current rated anti-parallel Emitter Controlled Diode C Features TRENCHSTOP 2 technology offers Very low V , 1.75V at nominal current CE(sat) 10 sec short circuit withstand time at T =175 C vj Easy paralleling cap

 4.1. Size:2072K  infineon
 ikq75n120cs6.pdf pdf_icon

IKQ75N120CT2

IKQ75N120CS6 Sixth generation, high speed soft switching series High speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstop technology copacked with soft and fast recovery anti-parallel diode C Features 1200V TRENCHSTOPTM IGBT6 technology offering High efficiency in hard switching and resonant topologies Easy paralleling capability due to positive temperature coeffi

Otros transistores... IKW40N65H5, IKQ100N60T, IKQ120N60T, IKQ40N120CH3, IKQ40N120CT2, IKQ50N120CH3, IKQ50N120CT2, IKQ75N120CS6, FGH60N60SMD, IKW15N120BH6, IKW30N60DTP, IKW30N65ES5, IKW40N120CS6, IKW40N60DTP, IKW40N65ES5, IKW50N60DTP, IKW50N65EH5