IKW30N65ES5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW30N65ES5
Tipo de transistor: IGBT + Diode
Código de marcado: K30EES5
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 188
Tensión máxima colector-emisor |Vce|, V: 650
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 62
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.35
Tensión máxima de puerta-umbral |VGE(th)|, V: 4.8
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 12
Capacitancia de salida (Cc), typ, pF: 55
Carga total de la puerta (Qg), typ, nC: 70
Paquete / Cubierta: TO247
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IKW30N65ES5 Datasheet (PDF)
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Reverse Conducting SeriesReverse conducting IGBT with monolithic body diodeIKW30N65WR5Data sheetInductrial Power ControlIKW30N65WR5Reverse Conducting SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic diode optimized for ZCS applications TRENCHSTOPTM 5 technology applications offers:- high ruggedness, temperature stable behavior
ikw30n65wr5.pdf
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Reverse Conducting SeriesReverse conducting IGBT with monolithic body diodeIKW30N65WR5Data sheetInductrial Power ControlIKW30N65WR5Reverse Conducting SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic diode optimized for ZCS applications TRENCHSTOPTM 5 technology applications offers:- high ruggedness, temperature stable behavior
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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