IKW30N65ES5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW30N65ES5
Tipo de transistor: IGBT + Diode
Código de marcado: K30EES5
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 188 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 62 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.35 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 4.8 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 12 nS
Coesⓘ - Capacitancia de salida, typ: 55 pF
Qgⓘ - Carga total de la puerta, typ: 70 nC
Paquete / Cubierta: TO247
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IKW30N65ES5 Datasheet (PDF)
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Otros transistores... IKQ40N120CH3 , IKQ40N120CT2 , IKQ50N120CH3 , IKQ50N120CT2 , IKQ75N120CS6 , IKQ75N120CT2 , IKW15N120BH6 , IKW30N60DTP , RJP30H2A , IKW40N120CS6 , IKW40N60DTP , IKW40N65ES5 , IKW50N60DTP , IKW50N65EH5 , IKW75N60H3 , IKW75N65EH5 , IKW75N65ES5 .
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