IKW30N65ES5 Datasheet. Specs and Replacement

Type Designator: IKW30N65ES5  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 188 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 62 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃

tr ⓘ - Rise Time, typ: 12 nS

Coesⓘ - Output Capacitance, typ: 55 pF

Package: TO247

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IKW30N65ES5 datasheet

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Specs: IKQ40N120CH3, IKQ40N120CT2, IKQ50N120CH3, IKQ50N120CT2, IKQ75N120CS6, IKQ75N120CT2, IKW15N120BH6, IKW30N60DTP, IXGH60N60, IKW40N120CS6, IKW40N60DTP, IKW40N65ES5, IKW50N60DTP, IKW50N65EH5, IKW75N60H333, IKW75N65EH5, IKW75N65ES5

Keywords - IKW30N65ES5 transistor spec

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