IKW30N65ES5 Datasheet and Replacement
Type Designator: IKW30N65ES5
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 188 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 62 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 12 nS
Coesⓘ - Output Capacitance, typ: 55 pF
Package: TO247
IKW30N65ES5 substitution
IKW30N65ES5 Datasheet (PDF)
ikw30n65es5.pdf

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ikw30n65el5.pdf

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ikw30n65h5.pdf

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ikw30n65nl5.pdf

IGBTLow V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 2CE(sat)fast and soft antiparallel diodeIKW30N65NL5650V DuoPack IGBT and diodeLow V series fifth generationCE(sat)Data sheetIndustrial Power ControlIKW30N65NL5Low V series fifth generationCE(sat)Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 2CE(sat)fast and soft antiparallel diodeCFe
Datasheet: IKQ40N120CH3 , IKQ40N120CT2 , IKQ50N120CH3 , IKQ50N120CT2 , IKQ75N120CS6 , IKQ75N120CT2 , IKW15N120BH6 , IKW30N60DTP , RJP30H2A , IKW40N120CS6 , IKW40N60DTP , IKW40N65ES5 , IKW50N60DTP , IKW50N65EH5 , IKW75N60H3 , IKW75N65EH5 , IKW75N65ES5 .
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