IKW30N65ES5 Datasheet and Replacement
Type Designator: IKW30N65ES5
Type: IGBT + Anti-Parallel Diode
Marking Code: K30EES5
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 188 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 62 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 12 nS
Coesⓘ - Output Capacitance, typ: 55 pF
Qgⓘ - Total Gate Charge, typ: 70 nC
Package: TO247
- IGBT Cross-Reference
IKW30N65ES5 Datasheet (PDF)
ikw30n65es5.pdf

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ikw30n65el5.pdf

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ikw30n65nl5.pdf

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Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: DIM600DDM17-A
Keywords - IKW30N65ES5 transistor datasheet
IKW30N65ES5 cross reference
IKW30N65ES5 equivalent finder
IKW30N65ES5 lookup
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History: DIM600DDM17-A



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