All IGBT. IKW30N65ES5 Datasheet

 

IKW30N65ES5 IGBT. Datasheet pdf. Equivalent


   Type Designator: IKW30N65ES5
   Type: IGBT + Anti-Parallel Diode
   Marking Code: K30EES5
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 188 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 62 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 12 nS
   Coesⓘ - Output Capacitance, typ: 55 pF
   Qgⓘ - Total Gate Charge, typ: 70 nC
   Package: TO247

 IKW30N65ES5 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IKW30N65ES5 Datasheet (PDF)

 ..1. Size:1921K  infineon
 ikw30n65es5.pdf

IKW30N65ES5 IKW30N65ES5

IGBTTRENCHSTOPTM 5 high Speed soft switching IGBT with full current rated RAPID 1 diodeIKW30N65ES5650V TRENCHSTOPTM 5 high speed soft switching duopakData sheetIndustrial Power ControlIKW30N65ES5TRENCHSTOPTM 5 soft switching IGBTTRENCHSTOPTM 5 high speed soft switching IGBT copacked with full currentrated RAPID 1 fast and soft antiparallel diodeCFeatures and Benefits:Hi

 5.1. Size:1929K  infineon
 ikw30n65el5.pdf

IKW30N65ES5 IKW30N65ES5

IGBTLow V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1CE(sat)fast and soft antiparallel diodeIKW30N65EL5650V DuoPack IGBT and diodeLow V series fifth generationCE(sat)Data sheetIndustrial Power ControlIKW30N65EL5Low V series fifth generationCE(sat)Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1CE(sat)fast and soft antiparallel diodeCFe

 6.1. Size:2196K  infineon
 ikw30n65h5.pdf

IKW30N65ES5 IKW30N65ES5

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKW30N65H5650V DuoPack IGBT and DiodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKW30N65H5High speed switching series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diode

 6.2. Size:2093K  infineon
 ikw30n65nl5.pdf

IKW30N65ES5 IKW30N65ES5

IGBTLow V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 2CE(sat)fast and soft antiparallel diodeIKW30N65NL5650V DuoPack IGBT and diodeLow V series fifth generationCE(sat)Data sheetIndustrial Power ControlIKW30N65NL5Low V series fifth generationCE(sat)Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 2CE(sat)fast and soft antiparallel diodeCFe

 6.3. Size:1908K  infineon
 ikw30n65wr5 k30ewr5.pdf

IKW30N65ES5 IKW30N65ES5

Reverse Conducting SeriesReverse conducting IGBT with monolithic body diodeIKW30N65WR5Data sheetInductrial Power ControlIKW30N65WR5Reverse Conducting SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic diode optimized for ZCS applications TRENCHSTOPTM 5 technology applications offers:- high ruggedness, temperature stable behavior

 6.4. Size:1908K  infineon
 ikw30n65wr5.pdf

IKW30N65ES5 IKW30N65ES5

Reverse Conducting SeriesReverse conducting IGBT with monolithic body diodeIKW30N65WR5Data sheetInductrial Power ControlIKW30N65WR5Reverse Conducting SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic diode optimized for ZCS applications TRENCHSTOPTM 5 technology applications offers:- high ruggedness, temperature stable behavior

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