IKW40N120CS6 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW40N120CS6
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 500 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 39 nS
Coesⓘ - Capacitancia de salida, typ: 185 pF
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IKW40N120CS6 IGBT
IKW40N120CS6 PDF specs
ikw40n120cs6.pdf
IKW40N120CS6 Sixth generation, high speed soft switching series High speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstop technology copacked with soft and fast recovery anti-parallel diode C Features 1200V TRENCHSTOPTM IGBT6 technology offering High efficiency in hard switching and resonant topologies Easy paralleling capability due to positive temperature coeffi... See More ⇒
ikw40n120t2 .pdf
IKW40N120T2 TrenchStop 2nd Generation Series Low Loss DuoPack IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel EmCon diode C Best in class TO247 Short circuit withstand time 10 s Designed for G E - Frequency Converters - Uninterrupted Power Supply TrenchStop 2nd generation for 1200 V applications offers - very t... See More ⇒
ikw40n120h3.pdf
IGBT High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW40N120H3 1200V high speed switching series third generation Data sheet Industrial Power Control IKW40N120H3 High speed switching series third generation High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode C Features ... See More ⇒
ikw40n120h3 rev1 2g.pdf
IKW40N120H3 High speed switching series third generation High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode C Features TRENCHSTOPTM technology offering very low V CEsat G E low EMI Very soft, fast recovery anti-parallel diode maximum junction temperature 175 C qualified according to JEDEC for target app... See More ⇒
Otros transistores... IKQ40N120CT2 , IKQ50N120CH3 , IKQ50N120CT2 , IKQ75N120CS6 , IKQ75N120CT2 , IKW15N120BH6 , IKW30N60DTP , IKW30N65ES5 , IXGH60N60 , IKW40N60DTP , IKW40N65ES5 , IKW50N60DTP , IKW50N65EH5 , IKW75N60H3 , IKW75N65EH5 , IKW75N65ES5 , IKY40N120CH3 .
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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