IKW40N120CS6 Даташит. Аналоги. Параметры и характеристики.
Наименование: IKW40N120CS6
Тип транзистора: IGBT + Diode
Маркировка: K40MCS6
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 500 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.85 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.3 V
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 39 nS
Coesⓘ - Выходная емкость, типовая: 185 pF
Qgⓘ - Общий заряд затвора, typ: 285 nC
Тип корпуса: TO247
- подбор IGBT транзистора по параметрам
IKW40N120CS6 Datasheet (PDF)
ikw40n120cs6.pdf

IKW40N120CS6Sixth generation, high speed soft switching seriesHigh speed soft switching TRENCHSTOPTM IGBT 6 in Trench and Fieldstoptechnology copacked with soft and fast recovery anti-parallel diodeCFeatures:1200V TRENCHSTOPTM IGBT6 technology offering: High efficiency in hard switching and resonant topologies Easy paralleling capability due to positive temperaturecoeffi
ikw40n120t2 .pdf

IKW40N120T2 TrenchStop 2nd Generation Series Low Loss DuoPack : IGBT in 2nd generation TrenchStop with soft, fast recovery anti-parallel EmCon diode C Best in class TO247 Short circuit withstand time 10s Designed for : GE - Frequency Converters - Uninterrupted Power Supply TrenchStop 2nd generation for 1200 V applications offers : - very t
ikw40n120h3.pdf

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diodeIKW40N120H31200V high speed switching series third generationData sheetIndustrial Power ControlIKW40N120H3High speed switching series third generationHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel diodeCFeatures:
ikw40n120h3 rev1 2g.pdf

IKW40N120H3High speed switching series third generationHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel diodeCFeatures:TRENCHSTOPTM technology offering very low VCEsatGE low EMI Very soft, fast recovery anti-parallel diode maximum junction temperature 175C qualified according to JEDEC for target app
Другие IGBT... IKQ40N120CT2 , IKQ50N120CH3 , IKQ50N120CT2 , IKQ75N120CS6 , IKQ75N120CT2 , IKW15N120BH6 , IKW30N60DTP , IKW30N65ES5 , SGT50T65FD1PT , IKW40N60DTP , IKW40N65ES5 , IKW50N60DTP , IKW50N65EH5 , IKW75N60H3 , IKW75N65EH5 , IKW75N65ES5 , IKY40N120CH3 .



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