IKW40N65ES5 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IKW40N65ES5  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 230 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 79 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.35 V @25℃

trⓘ - Tiempo de subida, typ: 18 nS

Coesⓘ - Capacitancia de salida, typ: 71 pF

Encapsulados: TO247

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IKW40N65ES5 datasheet

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IKW40N65ES5

IGBT TRENCHSTOPTM 5 high Speed soft switching IGBT with full current rated RAPID 1 diode IKW40N65ES5 650V TRENCHSTOPTM 5 high speed soft switching duopak Data sheet Industrial Power Control IKW40N65ES5 TRENCHSTOPTM 5 soft switching IGBT TRENCHSTOPTM 5 high speed soft switching IGBT copacked with full current rated RAPID 1 fast and soft antiparallel diode C Features and Benefits Hi

 6.1. Size:1992K  infineon
 aikw40n65df5.pdf pdf_icon

IKW40N65ES5

AIKW40N65DF5 High speed switching series fifth generation High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode C Features and Benefits High speed F5 technology offering Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltage G Low gate charge Q G E IGBT copacked with RAPID 1 f

 6.2. Size:2123K  infineon
 ikw40n65f5a.pdf pdf_icon

IKW40N65ES5

IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode IKW40N65F5A 650V DuoPack IGBT and diode High speed switching series fifth generation Data sheet Industrial Power Control IKW40N65F5A High speed switching series fifth generation High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antipar

 6.3. Size:1996K  infineon
 aikw40n65dh5.pdf pdf_icon

IKW40N65ES5

AIKW40N65DH5 High speed switching series fifth generation High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode C Features and Benefits High speed H5 technology offering Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs G 650V breakdown voltage E

MOSTRAR MÁS

Otros transistores... IKQ50N120CT2, IKQ75N120CS6, IKQ75N120CT2, IKW15N120BH6, IKW30N60DTP, IKW30N65ES5, IKW40N120CS6, IKW40N60DTP, RJP30H2A, IKW50N60DTP, IKW50N65EH5, IKW75N60H333, IKW75N65EH5, IKW75N65ES5, IKY40N120CH3, IKY40N120CS6, IKY50N120CH3