IKW40N65ES5 Даташит. Аналоги. Параметры и характеристики.
Наименование: IKW40N65ES5
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 230 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 79 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.35 V @25℃
Tjⓘ - Максимальная температура перехода: 175 ℃
trⓘ - Время нарастания типовое: 18 nS
Coesⓘ - Выходная емкость, типовая: 71 pF
Тип корпуса: TO247
- подбор IGBT транзистора по параметрам
IKW40N65ES5 Datasheet (PDF)
ikw40n65es5.pdf

IGBTTRENCHSTOPTM 5 high Speed soft switching IGBT with full current rated RAPID 1 diodeIKW40N65ES5650V TRENCHSTOPTM 5 high speed soft switching duopakData sheetIndustrial Power ControlIKW40N65ES5TRENCHSTOPTM 5 soft switching IGBTTRENCHSTOPTM 5 high speed soft switching IGBT copacked with full currentrated RAPID 1 fast and soft antiparallel diodeCFeatures and Benefits:Hi
aikw40n65df5.pdf

AIKW40N65DF5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparallel diodeCFeatures and Benefits: High speed F5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltageG Low gate charge QGE IGBT copacked with RAPID 1 f
ikw40n65f5a.pdf

IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKW40N65F5A650V DuoPack IGBT and diodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKW40N65F5AHigh speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antipar
aikw40n65dh5.pdf

AIKW40N65DH5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparallel diodeCFeatures and Benefits: High speed H5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTsG 650V breakdown voltageE
Другие IGBT... IKQ50N120CT2 , IKQ75N120CS6 , IKQ75N120CT2 , IKW15N120BH6 , IKW30N60DTP , IKW30N65ES5 , IKW40N120CS6 , IKW40N60DTP , FGH60N60SMD , IKW50N60DTP , IKW50N65EH5 , IKW75N60H3 , IKW75N65EH5 , IKW75N65ES5 , IKY40N120CH3 , IKY40N120CS6 , IKY50N120CH3 .
History: STGE50NC60WD | 2MBI200TA-060 | IKP15N65H5 | 2MBI150VB-120-50 | MG06400D-BN4MM | MMG400Q060B6EN
History: STGE50NC60WD | 2MBI200TA-060 | IKP15N65H5 | 2MBI150VB-120-50 | MG06400D-BN4MM | MMG400Q060B6EN



Список транзисторов
Обновления
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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