IKW40N65ES5 - Аналоги. Основные параметры
Наименование: IKW40N65ES5
Тип транзистора: IGBT
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 230 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 79 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.35 V @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
tr ⓘ - Время нарастания типовое: 18 nS
Coesⓘ - Выходная емкость, типовая: 71 pF
Тип корпуса: TO247
Аналог (замена) для IKW40N65ES5
Технические параметры IKW40N65ES5
ikw40n65es5.pdf
IGBT TRENCHSTOPTM 5 high Speed soft switching IGBT with full current rated RAPID 1 diode IKW40N65ES5 650V TRENCHSTOPTM 5 high speed soft switching duopak Data sheet Industrial Power Control IKW40N65ES5 TRENCHSTOPTM 5 soft switching IGBT TRENCHSTOPTM 5 high speed soft switching IGBT copacked with full current rated RAPID 1 fast and soft antiparallel diode C Features and Benefits Hi
aikw40n65df5.pdf
AIKW40N65DF5 High speed switching series fifth generation High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode C Features and Benefits High speed F5 technology offering Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltage G Low gate charge Q G E IGBT copacked with RAPID 1 f
ikw40n65f5a.pdf
IGBT High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode IKW40N65F5A 650V DuoPack IGBT and diode High speed switching series fifth generation Data sheet Industrial Power Control IKW40N65F5A High speed switching series fifth generation High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antipar
aikw40n65dh5.pdf
AIKW40N65DH5 High speed switching series fifth generation High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode C Features and Benefits High speed H5 technology offering Best-in-Class efficiency in hard switching and resonant topologies Plug and play replacement of previous generation IGBTs G 650V breakdown voltage E
Другие IGBT... IKQ50N120CT2 , IKQ75N120CS6 , IKQ75N120CT2 , IKW15N120BH6 , IKW30N60DTP , IKW30N65ES5 , IKW40N120CS6 , IKW40N60DTP , RJP30H2A , IKW50N60DTP , IKW50N65EH5 , IKW75N60H3 , IKW75N65EH5 , IKW75N65ES5 , IKY40N120CH3 , IKY40N120CS6 , IKY50N120CH3 .
History: IKW50N65EH5
History: IKW50N65EH5
Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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