IKW75N60H333 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IKW75N60H333  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃

trⓘ - Tiempo de subida, typ: 60 nS

Coesⓘ - Capacitancia de salida, typ: 240 pF

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IKW75N60H333 datasheet

 4.1. Size:1935K  infineon
 ikw75n60h3.pdf pdf_icon

IKW75N60H333

IGBT High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW75N60H3 600V high speed switching series third generation Data sheet Industrial & Multimarket IKW75N60H3 High speed switching series third generation High speed IGBT in Trench and Fieldstop technology C Features TRENCHSTOPTM technology offering very lo

 6.1. Size:1972K  infineon
 aikw75n60ct.pdf pdf_icon

IKW75N60H333

AIKW75N60CT TRENCHSTOPTM Series Low Loss DuoPack IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode C Features Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.) CE(sat) Maximum junction temperature 175 C G Dynamically stress tested E Shor

 6.2. Size:853K  infineon
 ikw75n60t.pdf pdf_icon

IKW75N60H333

IKW75N60T TRENCHSTOP Series q Low Loss DuoPack IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G Positive temperature coefficient in VCE(sat) E very tight parameter distribution high rugg

 6.3. Size:405K  infineon
 ikw75n60trev2 6g.pdf pdf_icon

IKW75N60H333

IKW75N60T TrenchStop Series q Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C G Short circuit withstand time 5 s E Positive temperature coefficient in VCE(sat) very tight parameter distribution high rugg

MOSTRAR MÁS

Otros transistores... IKW15N120BH6, IKW30N60DTP, IKW30N65ES5, IKW40N120CS6, IKW40N60DTP, IKW40N65ES5, IKW50N60DTP, IKW50N65EH5, CRG40T60AN3H, IKW75N65EH5, IKW75N65ES5, IKY40N120CH3, IKY40N120CS6, IKY50N120CH3, IKY75N120CH3, IKY75N120CS6, IKZ50N65EH5