IKW75N65ES5 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW75N65ES5 📄📄
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 395 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.42 V @25℃
trⓘ - Tiempo de subida, typ: 46 nS
Coesⓘ - Capacitancia de salida, typ: 130 pF
Encapsulados: TO247
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Otros transistores... IKW30N65ES5, IKW40N120CS6, IKW40N60DTP, IKW40N65ES5, IKW50N60DTP, IKW50N65EH5, IKW75N60H333, IKW75N65EH5, RJP30E2DPP-M0, IKY40N120CH3, IKY40N120CS6, IKY50N120CH3, IKY75N120CH3, IKY75N120CS6, IKZ50N65EH5, IKZ50N65ES5, IKZ75N65EH5
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