IKZ75N65EH5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKZ75N65EH5
Tipo de transistor: IGBT + Diode
Código de marcado: K75EEH5
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 395 W
|Vce|ⓘ - Tensión máxima colector-emisor: 650 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 90 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 4.8 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 11 nS
Coesⓘ - Capacitancia de salida, typ: 130 pF
Qgⓘ - Carga total de la puerta, typ: 166 nC
Paquete / Cubierta: TO247-4
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