IKZ75N65EH5 Todos los transistores

 

IKZ75N65EH5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IKZ75N65EH5
   Tipo de transistor: IGBT + Diode
   Código de marcado: K75EEH5
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 395 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 90 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 4.8 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 11 nS
   Coesⓘ - Capacitancia de salida, typ: 130 pF
   Qgⓘ - Carga total de la puerta, typ: 166 nC
   Paquete / Cubierta: TO247-4
 

 Búsqueda de reemplazo de IKZ75N65EH5 IGBT

   - Selección ⓘ de transistores por parámetros

 

IKZ75N65EH5 Datasheet (PDF)

 ..1. Size:2169K  infineon
 ikz75n65eh5.pdf pdf_icon

IKZ75N65EH5

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKZ75N65EH5650V DuoPack IGBT and diodeHigh speed series fifth generationData sheetIndustrial Power ControlIKZ75N65EH5High speed series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeFeatures and Bene

 5.1. Size:1857K  infineon
 ikz75n65el5.pdf pdf_icon

IKZ75N65EH5

IGBTLow V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1CE(sat)fast and soft antiparallel diodeIKZ75N65EL5650V DuoPack IGBT and diodeLow V series fifth generationCE(sat)Data sheetIndustrial Power ControlIKZ75N65EL5Low V series fifth generationCE(sat)Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1CE(sat)fast and soft antiparallel diodeFeatu

 5.2. Size:1427K  infineon
 ikz75n65es5.pdf pdf_icon

IKZ75N65EH5

IKZ75N65ES5TRENCHSTOPTM 5 soft switching IGBTTRENCHSTOPTM 5 high speed soft switching IGBT copacked with full currentrated RAPID 1 fast and soft antiparallel diodeFeatures and Benefits:High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low V , 1.42V at nominal currentCEsat Plug and play replacement of previous generatio

Otros transistores... IKW75N65ES5 , IKY40N120CH3 , IKY40N120CS6 , IKY50N120CH3 , IKY75N120CH3 , IKY75N120CS6 , IKZ50N65EH5 , IKZ50N65ES5 , FGA60N65SMD , IKZ75N65ES5 , IRG4BC20KDPBF , IRG4BC20UDPBF , IRG4IBC10UDPBF , IRG4PC30FPBF , IRG4PC30UDPBF , IRG4PC40FDPBF , IRG4PC50FPBF .

History: IXGX120N60C2 | SPT25N120U1T8TL | JT010N065WED | IGW30N60T | DIM800NSM33-F | SRE50N065FSUD6 | AUIRGP65G40D0

 

 
Back to Top

 


 
.