IKZ75N65EH5 IGBT. Datasheet pdf. Equivalent
Type Designator: IKZ75N65EH5
Type: IGBT + Anti-Parallel Diode
Marking Code: K75EEH5
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 395
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 90
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.65
Maximum G-E Threshold Voltag |VGE(th)|, V: 4.8
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 11
Collector Capacity (Cc), typ, pF: 130
Total Gate Charge (Qg), typ, nC: 166
Package: TO247-4
IKZ75N65EH5 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKZ75N65EH5 Datasheet (PDF)
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IGBTLow V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1CE(sat)fast and soft antiparallel diodeIKZ75N65EL5650V DuoPack IGBT and diodeLow V series fifth generationCE(sat)Data sheetIndustrial Power ControlIKZ75N65EL5Low V series fifth generationCE(sat)Low V IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1CE(sat)fast and soft antiparallel diodeFeatu
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IKZ75N65ES5TRENCHSTOPTM 5 soft switching IGBTTRENCHSTOPTM 5 high speed soft switching IGBT copacked with full currentrated RAPID 1 fast and soft antiparallel diodeFeatures and Benefits:High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low V , 1.42V at nominal currentCEsat Plug and play replacement of previous generatio
Datasheet: IKW75N65ES5 , IKY40N120CH3 , IKY40N120CS6 , IKY50N120CH3 , IKY75N120CH3 , IKY75N120CS6 , IKZ50N65EH5 , IKZ50N65ES5 , MBQ50T65FDSC , IKZ75N65ES5 , IRG4BC20KDPBF , IRG4BC20UDPBF , IRG4IBC10UDPBF , IRG4PC30FPBF , IRG4PC30UDPBF , IRG4PC40FDPBF , IRG4PC50FPBF .
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