IRG4BC20KDPBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG4BC20KDPBF  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 60 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 16 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.27 V @25℃

trⓘ - Tiempo de subida, typ: 34 nS

Coesⓘ - Capacitancia de salida, typ: 61 pF

Encapsulados: TO220AB

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IRG4BC20KDPBF datasheet

 ..1. Size:315K  international rectifier
 irg4bc20kdpbf.pdf pdf_icon

IRG4BC20KDPBF

IRG4BC20KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C GE =

 4.1. Size:222K  international rectifier
 irg4bc20kd-s.pdf pdf_icon

IRG4BC20KDPBF

PD -91598A IRG4BC20KD-S INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features Features Features Features Features C Short Circuit Rated UltraFast Optimized for VCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10 s @ 125 C, VGE = 15V Generation 4 IGBT design provides tighter VCE(on)

 4.2. Size:202K  international rectifier
 irg4bc20kd.pdf pdf_icon

IRG4BC20KDPBF

PD -91599A IRG4BC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features Features Features Features Features C Short Circuit Rated UltraFast Optimized for VCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10 s @ 125 C, VGE = 15V Generation 4 IGBT design provides tighter VCE(on

 5.1. Size:141K  international rectifier
 irg4bc20k.pdf pdf_icon

IRG4BC20KDPBF

D I Short Circuit Rated I T D T I T I T UltraFast IGBT Features Features Features Features Features C High short circuit rating optimized for motor control, VCES = 600V tsc =10 s, @360V VCE (start), TJ = 125 C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.27V switching speed G Latest generation design

MOSTRAR MÁS

Otros transistores... IKY40N120CS6, IKY50N120CH3, IKY75N120CH3, IKY75N120CS6, IKZ50N65EH5, IKZ50N65ES5, IKZ75N65EH5, IKZ75N65ES5, SGT60N60FD1P7, IRG4BC20UDPBF, IRG4IBC10UDPBF, IRG4PC30FPBF, IRG4PC30UDPBF, IRG4PC40FDPBF, IRG4PC50FPBF, IRG4PC50SDPBF, IRG4PC50UDPBF