IRG4IBC10UDPBF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRG4IBC10UDPBF
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 25
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 6.8
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.15
Tensión máxima de puerta-umbral |VGE(th)|, V: 6
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 16
Capacitancia de salida (Cc), typ, pF: 21
Carga total de la puerta (Qg), typ, nC: 15
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de IRG4IBC10UDPBF - IGBT
IRG4IBC10UDPBF Datasheet (PDF)
irg4ibc10ud.pdf
PD - 93765IRG4IBC10UDINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast Co-Pack IGBTULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures UltraFast: Optimized for high operating up toVCE(on) typ. = 2.15V 80 kHz in hard switching, > 200 kHz in resonant modeG Generation 4 IGBT design provides tighter@VGE = 15V, IC = 5.0A parameter distribution and higher efficiency th
irg4ibc20w.pdf
PD 91785AIRG4IBC20WINSULATED GATE BIPOLAR TRANSISTORFeaturesC Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications VCES = 600V 2.5kV, 60s insulation voltage V Industry-benchmark switching losses improveVCE(on) typ. = 2.16VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, IC = 6
irg4ibc30kd.pdf
PD -91690AIRG4IBC30KDINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODEUltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC High switching speed optimized for up to 25kHzVCES = 600V with low VCE(on) Short Circuit Rating 10s @ 125C, VGE = 15V Generation 4 IGBT design provides tighterVCE(on) typ. = 2.21V para
irg4ibc30fd.pdf
PD- 91751AIRG4IBC30FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Very Low 1.59V votage dropVCES = 600V 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsinkVCE(on) typ. = 1.59V Fast: Optimized for medium operatingG frequencies ( 1-5 kHz in hard switchi
irg4ibc30w.pdf
PD 91791AIRG4IBC30WINSULATED GATE BIPOLAR TRANSISTORFeaturesC Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications VCES = 600V 2.5kV, 60s insulation voltage V Industry-benchmark switching losses improveVCE(on) typ. = 2.1VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, IC = 12
irg4ibc20ud.pdf
PD -91752AIRG4IBC20UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures 2.5kV, 60s insulation voltage VCES = 600V 4.8 mm creapage distance to heatsink UltraFast: Optimized for high operatingVCE(on) typ. = 1.85V frequencies 8-40 kHz in hard switching, >200G kHz in resonant mode IGBT co-packaged with HEXF
irg4ibc30s.pdf
PD - 94293IRG4IBC30SINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures Standard: Optimized for minimum saturationVCES = 600V voltage and low operating freqencies (
irg4ibc20kd.pdf
PD -91689AIRG4IBC20KDINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODEUltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC High switching speed optimized for up to 25kHzVCES = 600V with low VCE(on) Short Circuit Rating 10s @ 125C, VGE = 15V Generation 4 IGBT design provides tighterVCE(on) typ. = 2.27V para
irg4ibc20fd.pdf
PD -91750AIRG4IBC20FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Very Low 1.66V votage dropVCES = 600V 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsinkVCE(on) typ. = 1.66V Fast: Optimized for medium operatingG frequencies ( 1-5 kHz in hard switchi
irg4ibc30ud.pdf
PD91753AIRG4IBC30UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures 2.5kV, 60s insulation voltage U VCES = 600V 4.8 mm creapage distance to heatsink UltraFast: Optimized for high operatingVCE(on) typ. = 1.95V frequencies 8-40 kHz in hard switching, >200G kHz in resonant m
Otros transistores... IKY75N120CH3 , IKY75N120CS6 , IKZ50N65EH5 , IKZ50N65ES5 , IKZ75N65EH5 , IKZ75N65ES5 , IRG4BC20KDPBF , IRG4BC20UDPBF , RJH30E2DPP , IRG4PC30FPBF , IRG4PC30UDPBF , IRG4PC40FDPBF , IRG4PC50FPBF , IRG4PC50SDPBF , IRG4PC50UDPBF , IRG4PC50UPBF , IRG4PF50WPBF .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ