IRG4IBC10UDPBF IGBT. Datasheet pdf. Equivalent
Type Designator: IRG4IBC10UDPBF
Type: IGBT
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 25
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 6.8
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.15
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 16
Collector Capacity (Cc), typ, pF: 21
Package: TO220AB
IRG4IBC10UDPBF Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRG4IBC10UDPBF Datasheet (PDF)
irg4ibc10ud.pdf
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PD - 93765IRG4IBC10UDINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast Co-Pack IGBTULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures UltraFast: Optimized for high operating up toVCE(on) typ. = 2.15V 80 kHz in hard switching, > 200 kHz in resonant modeG Generation 4 IGBT design provides tighter@VGE = 15V, IC = 5.0A parameter distribution and higher efficiency th
irg4ibc20w.pdf
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PD 91785AIRG4IBC20WINSULATED GATE BIPOLAR TRANSISTORFeaturesC Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications VCES = 600V 2.5kV, 60s insulation voltage V Industry-benchmark switching losses improveVCE(on) typ. = 2.16VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, IC = 6
irg4ibc30kd.pdf
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PD -91690AIRG4IBC30KDINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODEUltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC High switching speed optimized for up to 25kHzVCES = 600V with low VCE(on) Short Circuit Rating 10s @ 125C, VGE = 15V Generation 4 IGBT design provides tighterVCE(on) typ. = 2.21V para
irg4ibc30fd.pdf
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PD- 91751AIRG4IBC30FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Very Low 1.59V votage dropVCES = 600V 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsinkVCE(on) typ. = 1.59V Fast: Optimized for medium operatingG frequencies ( 1-5 kHz in hard switchi
irg4ibc30w.pdf
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PD 91791AIRG4IBC30WINSULATED GATE BIPOLAR TRANSISTORFeaturesC Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications VCES = 600V 2.5kV, 60s insulation voltage V Industry-benchmark switching losses improveVCE(on) typ. = 2.1VG efficiency of all power supply topologies 50% reduction of Eoff parameter@VGE = 15V, IC = 12
irg4ibc20ud.pdf
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PD -91752AIRG4IBC20UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures 2.5kV, 60s insulation voltage VCES = 600V 4.8 mm creapage distance to heatsink UltraFast: Optimized for high operatingVCE(on) typ. = 1.85V frequencies 8-40 kHz in hard switching, >200G kHz in resonant mode IGBT co-packaged with HEXF
irg4ibc30s.pdf
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PD - 94293IRG4IBC30SINSULATED GATE BIPOLAR TRANSISTORFeatures CFeaturesFeaturesFeaturesFeatures Standard: Optimized for minimum saturationVCES = 600V voltage and low operating freqencies (
irg4ibc20kd.pdf
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PD -91689AIRG4IBC20KDINSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit RatedULTRAFAST SOFT RECOVERY DIODEUltraFast IGBTFeaturesFeaturesFeaturesFeaturesFeaturesC High switching speed optimized for up to 25kHzVCES = 600V with low VCE(on) Short Circuit Rating 10s @ 125C, VGE = 15V Generation 4 IGBT design provides tighterVCE(on) typ. = 2.27V para
irg4ibc20fd.pdf
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PD -91750AIRG4IBC20FD Fast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures Very Low 1.66V votage dropVCES = 600V 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsinkVCE(on) typ. = 1.66V Fast: Optimized for medium operatingG frequencies ( 1-5 kHz in hard switchi
irg4ibc30ud.pdf
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PD91753AIRG4IBC30UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures 2.5kV, 60s insulation voltage U VCES = 600V 4.8 mm creapage distance to heatsink UltraFast: Optimized for high operatingVCE(on) typ. = 1.95V frequencies 8-40 kHz in hard switching, >200G kHz in resonant m
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
![IRG4IBC10UDPBF](https://alltransistors.com/images/us.png)
![IRG4IBC10UDPBF](https://alltransistors.com/images/es.png)
![IRG4IBC10UDPBF](https://alltransistors.com/images/ru.png)
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