IRG4IBC10UDPBF Datasheet. Specs and Replacement
Type Designator: IRG4IBC10UDPBF 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ -
Maximum Power Dissipation: 25 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 6.8 A @25℃
Tj ⓘ -
Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ -
Collector-Emitter saturation Voltage, typ: 2.15 V @25℃
tr ⓘ - Rise Time, typ: 16 nS
Coesⓘ - Output Capacitance, typ: 21 pF
Package: TO220AB
IRG4IBC10UDPBF Substitution
- IGBTⓘ Cross-Reference Search
IRG4IBC10UDPBF datasheet
3.1. Size:182K international rectifier
irg4ibc10ud.pdf 

PD - 93765 IRG4IBC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast Co-Pack IGBT ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features UltraFast Optimized for high operating up to VCE(on) typ. = 2.15V 80 kHz in hard switching, > 200 kHz in resonant mode G Generation 4 IGBT design provides tighter @VGE = 15V, IC = 5.0A parameter distribution and higher efficiency th... See More ⇒
7.1. Size:157K international rectifier
irg4ibc20w.pdf 

PD 91785A IRG4IBC20W INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications VCES = 600V 2.5kV, 60s insulation voltage V Industry-benchmark switching losses improve VCE(on) typ. = 2.16V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 6... See More ⇒
7.2. Size:198K international rectifier
irg4ibc30kd.pdf 

PD -91690A IRG4IBC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features Features Features Features Features C High switching speed optimized for up to 25kHz VCES = 600V with low VCE(on) Short Circuit Rating 10 s @ 125 C, VGE = 15V Generation 4 IGBT design provides tighter VCE(on) typ. = 2.21V para... See More ⇒
7.3. Size:223K international rectifier
irg4ibc30fd.pdf 

PD- 91751A IRG4IBC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Very Low 1.59V votage drop VCES = 600V 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsink VCE(on) typ. = 1.59V Fast Optimized for medium operating G frequencies ( 1-5 kHz in hard switchi... See More ⇒
7.4. Size:163K international rectifier
irg4ibc30w.pdf 

PD 91791A IRG4IBC30W INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications VCES = 600V 2.5kV, 60s insulation voltage V Industry-benchmark switching losses improve VCE(on) typ. = 2.1V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 12... See More ⇒
7.5. Size:331K international rectifier
irg4ibc20ud.pdf 

PD -91752A IRG4IBC20UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features 2.5kV, 60s insulation voltage VCES = 600V 4.8 mm creapage distance to heatsink UltraFast Optimized for high operating VCE(on) typ. = 1.85V frequencies 8-40 kHz in hard switching, >200 G kHz in resonant mode IGBT co-packaged with HEXF... See More ⇒
7.6. Size:129K international rectifier
irg4ibc30s.pdf 

PD - 94293 IRG4IBC30S INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features Standard Optimized for minimum saturation VCES = 600V voltage and low operating freqencies (... See More ⇒
7.7. Size:207K international rectifier
irg4ibc20kd.pdf 

PD -91689A IRG4IBC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features Features Features Features Features C High switching speed optimized for up to 25kHz VCES = 600V with low VCE(on) Short Circuit Rating 10 s @ 125 C, VGE = 15V Generation 4 IGBT design provides tighter VCE(on) typ. = 2.27V para... See More ⇒
7.8. Size:226K international rectifier
irg4ibc20fd.pdf 

PD -91750A IRG4IBC20FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Very Low 1.66V votage drop VCES = 600V 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsink VCE(on) typ. = 1.66V Fast Optimized for medium operating G frequencies ( 1-5 kHz in hard switchi... See More ⇒
7.9. Size:231K international rectifier
irg4ibc30ud.pdf 

PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features 2.5kV, 60s insulation voltage U VCES = 600V 4.8 mm creapage distance to heatsink UltraFast Optimized for high operating VCE(on) typ. = 1.95V frequencies 8-40 kHz in hard switching, >200 G kHz in resonant m... See More ⇒
Specs: IKY75N120CH3, IKY75N120CS6, IKZ50N65EH5, IKZ50N65ES5, IKZ75N65EH5, IKZ75N65ES5, IRG4BC20KDPBF, IRG4BC20UDPBF, IRG7IC28U, IRG4PC30FPBF, IRG4PC30UDPBF, IRG4PC40FDPBF, IRG4PC50FPBF, IRG4PC50SDPBF, IRG4PC50UDPBF, IRG4PC50UPBF, IRG4PF50WPBF
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