IRG4PSC71KDPBF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRG4PSC71KDPBF
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 350
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 85
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.83
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 107
Capacitancia de salida (Cc), typ, pF: 730
Paquete / Cubierta: SUPER-247 TO-274AA
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IRG4PSC71KDPBF Datasheet (PDF)
irg4psc71kdpbf.pdf
PD- 95901IRG4PSC71KDPbF Lead-Freewww.irf.com 109/15/04IRG4PSC71KDPbF2 www.irf.comIRG4PSC71KDPbFwww.irf.com 3IRG4PSC71KDPbF4 www.irf.comIRG4PSC71KDPbFwww.irf.com 5IRG4PSC71KDPbF6 www.irf.comIRG4PSC71KDPbFwww.irf.com 7IRG4PSC71KDPbF8 www.irf.comIRG4PSC71KDPbFwww.irf.com 9IRG4PSC71KDPbFCase Outline and Dimensions Super-247Super-247 (TO-
irg4psc71kd.pdf
PD - 91684AIRG4PSC71KDPRELIMINARY Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeatures Hole-less clip/pressure mount package compatible VCES = 600Vwith TO-247 and TO-264, with reinforced pins High abort circuit rating IGBTs, optimized forVCE(on) typ. = 1.83VmotorcontrolG Minimum switching losses comb
irg4psc71k.pdf
PD - 91683BIRG4PSC71KShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTCFeaturesVCES = 600V Hole-less clip/pressure mount package compatiblewith TO-247 and TO-264, with reinforced pinsVCE(on) typ. = 1.83V High abort circuit rating IGBTs, optimized forGmotorcontrol Minimum switching losses combined with low@VGE = 15V, IC = 60AEconduction
irg4psc71u.pdf
PD - 91681AIRG4PSC71UUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C UltraFast switching speed optimized for operatingVCES = 600V frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching Generation 4 IGBT design provides tighterVCE(on) typ. = 1.67VG parameter distribution and higher efficiency (minimum switching and conduct
irg4psc71ud.pdf
PD - 91682AIRG4PSC71UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures Generation 4 IGBT design provides tighterVCES = 600V parameter distribution and higher efficiency (minimum switching and conduction losses) thanVCE(on) typ. = 1.67V prior generationsG IGBT co-packaged with HEXFRED ultrafast, ultrasoft recov
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