All IGBT. IRG4PSC71KDPBF Datasheet

 

IRG4PSC71KDPBF IGBT. Datasheet pdf. Equivalent


   Type Designator: IRG4PSC71KDPBF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 350
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 85
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.83
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 107
   Collector Capacity (Cc), typ, pF: 730
   Total Gate Charge (Qg), typ, nC: 340
   Package: SUPER-247 TO-274AA

 IRG4PSC71KDPBF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG4PSC71KDPBF Datasheet (PDF)

 ..1. Size:446K  infineon
 irg4psc71kdpbf.pdf

IRG4PSC71KDPBF IRG4PSC71KDPBF

PD- 95901IRG4PSC71KDPbF Lead-Freewww.irf.com 109/15/04IRG4PSC71KDPbF2 www.irf.comIRG4PSC71KDPbFwww.irf.com 3IRG4PSC71KDPbF4 www.irf.comIRG4PSC71KDPbFwww.irf.com 5IRG4PSC71KDPbF6 www.irf.comIRG4PSC71KDPbFwww.irf.com 7IRG4PSC71KDPbF8 www.irf.comIRG4PSC71KDPbFwww.irf.com 9IRG4PSC71KDPbFCase Outline and Dimensions Super-247Super-247 (TO-

 3.1. Size:191K  international rectifier
 irg4psc71kd.pdf

IRG4PSC71KDPBF IRG4PSC71KDPBF

PD - 91684AIRG4PSC71KDPRELIMINARY Short Circuit RatedINSULATED GATE BIPOLAR TRANSISTOR WITHUltraFast IGBTULTRAFAST SOFT RECOVERY DIODECFeatures Hole-less clip/pressure mount package compatible VCES = 600Vwith TO-247 and TO-264, with reinforced pins High abort circuit rating IGBTs, optimized forVCE(on) typ. = 1.83VmotorcontrolG Minimum switching losses comb

 4.1. Size:280K  international rectifier
 irg4psc71k.pdf

IRG4PSC71KDPBF IRG4PSC71KDPBF

PD - 91683BIRG4PSC71KShort Circuit RatedINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTCFeaturesVCES = 600V Hole-less clip/pressure mount package compatiblewith TO-247 and TO-264, with reinforced pinsVCE(on) typ. = 1.83V High abort circuit rating IGBTs, optimized forGmotorcontrol Minimum switching losses combined with low@VGE = 15V, IC = 60AEconduction

 5.1. Size:141K  international rectifier
 irg4psc71u.pdf

IRG4PSC71KDPBF IRG4PSC71KDPBF

PD - 91681AIRG4PSC71UUltraFast Speed IGBTINSULATED GATE BIPOLAR TRANSISTORFeatures C UltraFast switching speed optimized for operatingVCES = 600V frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching Generation 4 IGBT design provides tighterVCE(on) typ. = 1.67VG parameter distribution and higher efficiency (minimum switching and conduct

 5.2. Size:248K  international rectifier
 irg4psc71ud.pdf

IRG4PSC71KDPBF IRG4PSC71KDPBF

PD - 91682AIRG4PSC71UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures Generation 4 IGBT design provides tighterVCES = 600V parameter distribution and higher efficiency (minimum switching and conduction losses) thanVCE(on) typ. = 1.67V prior generationsG IGBT co-packaged with HEXFRED ultrafast, ultrasoft recov

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