IRGB4056DPBF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRGB4056DPBF
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 140 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 24 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.55 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 17 nS
Coesⓘ - Capacitancia de salida, typ: 52 pF
Qgⓘ - Carga total de la puerta, typ: 25 nC
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de IRGB4056DPBF IGBT
IRGB4056DPBF Datasheet (PDF)
irgb4056dpbf.pdf

PD - 97188AIRGB4056DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeatures Low VCE (ON) Trench IGBT Technology CVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 12A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of the parts tested for 4X rated current (ILM)
irgb4056d.pdf

PD - 97188AIRGB4056DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeatures Low VCE (ON) Trench IGBT Technology CVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 12A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of the parts tested for 4X rated current (ILM)
irgb4059dpbf.pdf

PD - 97072AIRGB4059DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeaturesIC = 4.0A, TC = 100C Low VCE (on) Trench IGBT Technology Low Switching LossesGtsc > 5s, Tjmax = 175C Maximum Junction temperature 175 C 5s SCSOAE Square RBSOAVCE(on) typ. = 1.75Vn-channel 100% of The Parts Tested for 4X Rat
irgb4059d.pdf

PD - 97072AIRGB4059DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHCULTRAFAST SOFT RECOVERY DIODEVCES = 600VFeaturesIC = 4.0A, TC = 100C Low VCE (on) Trench IGBT Technology Low Switching LossesGtsc > 5s, Tjmax = 175C Maximum Junction temperature 175 C 5s SCSOAE Square RBSOAVCE(on) typ. = 1.75Vn-channel 100% of The Parts Tested for 4X Rat
Otros transistores... IRG4PH30KPBF , IRG4PH40KDPBF , IRG4PH50KDPBF , IRG4PH50UDPBF , IRG4PSC71KDPBF , IRG7PH35UDPBF , IRG7PH35UD-EP , IRG7PH42UDPBF , IKW50N60T , IRGB4620DPBF , IRGIB4620DPBF , IRGP4620DPBF , IRGS4620DPBF , IRGB4630DPBF , IRGIB4630DPBF , IRGP4630DPBF , IRGS4630DPBF .
History: 2MBI200U4B-120 | MG75J2YS50 | VS-GT400TH60N | APT50GF120LR | MG1275W-XBN2MM | DM2G100SH6A | AFGY120T65SPD
History: 2MBI200U4B-120 | MG75J2YS50 | VS-GT400TH60N | APT50GF120LR | MG1275W-XBN2MM | DM2G100SH6A | AFGY120T65SPD



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