IRGSL4B60KD1PBF Todos los transistores

 

IRGSL4B60KD1PBF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRGSL4B60KD1PBF
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 63 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 11 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 18 nS
   Coesⓘ - Capacitancia de salida, typ: 25 pF
   Qgⓘ - Carga total de la puerta, typ: 12 nC
   Paquete / Cubierta: TO262
     - Selección de transistores por parámetros

 

IRGSL4B60KD1PBF Datasheet (PDF)

 0.1. Size:437K  international rectifier
 irgb4b60kd1pbf irgs4b60kd1pbf irgsl4b60kd1pbf.pdf pdf_icon

IRGSL4B60KD1PBF

PD - 95616AIRGB4B60KD1PbFIRGS4B60KD1PbFIRGSL4B60KD1PbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODE CVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 7.6A, TC=100C 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Positive VCE (on) Temperature Coefficient.E Maximum Junction Temperatu

 2.1. Size:442K  international rectifier
 irgsl4b60kd1.pdf pdf_icon

IRGSL4B60KD1PBF

PD - 94607BIRGB4B60KD1IRGS4B60KD1IRGSL4B60KD1INSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODE CVCES = 600VFeatures Low VCE (on) Non Punch Through IGBT Technology.IC = 7.6A, TC=100C 10s Short Circuit Capability.G Square RBSOA.tsc > 10s, TJ=150C Positive VCE (on) Temperature Coefficient.E Maximum Junction Temperature rated

 4.1. Size:299K  international rectifier
 irgsl4b60k.pdf pdf_icon

IRGSL4B60KD1PBF

PD - 94633AIRGB4B60KIRGS4B60KIRGSL4B60KINSULATED GATE BIPOLAR TRANSISTORFeaturesCVCES = 600V Low VCE (on) Non Punch Through IGBT Technology. 10s Short Circuit Capability.IC = 6.8A, TC=100C Square RBSOA. Positive VCE (on) Temperature Coefficient.G Maximum Junction Temperature rated at 175C. tsc > 10s, TJ=150CEVCE(on) typ. = 2.1VBenefits

MOSTRAR MÁS

Otros transistores... IRGP4620DPBF , IRGS4620DPBF , IRGB4630DPBF , IRGIB4630DPBF , IRGP4630DPBF , IRGS4630DPBF , IRGB4B60KD1PBF , IRGS4B60KD1PBF , RJH60F5DPQ-A0 , IRGIB10B60KD1P , IRGIB15B60KD1P , IRGP20B60PDPBF , IRGP35B60PDPBF , IRGP4062DPBF , IRGB4062DPBF , IRGP4062D-EPBF , IRGP4063DPBF .

History: IKP08N65F5 | MIXA30WB1200TMI | IXYF40N450 | IXSM25N100 | IXGH40N60B2D1 | MG06200S-BN4MM | VS-GT105LA120UX

 

 
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