IRGP35B60PDPBF IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRGP35B60PDPBF
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 308 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
trⓘ - Tiempo de subida, typ: 6 nS
Coesⓘ - Capacitancia de salida, typ: 265 pF
Encapsulados: TO247
Búsqueda de reemplazo de IRGP35B60PDPBF IGBT
- Selección ⓘ de transistores por parámetros
IRGP35B60PDPBF datasheet
irgp35b60pdpbf.pdf
SMPS IGBT PD - 95329 IRGP35B60PDPbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V VCE(on) typ. = 1.85V Applications @ VGE = 15V IC = 22A Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Equivalent MOSFET G Consumer Electronics Power Supplies Parameters Lead-Free RCE(on) typ. = 84m E Features ID (FET
auirgp35b60pd.pdf
PD - 97675 AUTOMOTIVE GRADE AUIRGP35B60PD WARP2 SERIES IGBT WITH C VCES = 600V ULTRAFAST SOFT RECOVERY DIODE VCE(on) typ. = 1.85V Features @ VGE = 15V IC = 22A NPT Technology, Positive Temperature Coefficient Lower VCE(SAT) Equivalent MOSFET Lower Parasitic Capacitances G Minimal Tail Current Parameters HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode RCE(on)
irgp35b60pd.pdf
PD - 94623B SMPS IGBT IRGP35B60PD WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V VCE(on) typ. = 1.85V Applications @ VGE = 15V IC = 22A Telecom and Server SMPS PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Equivalent MOSFET G Consumer Electronics Power Supplies Parameters RCE(on) typ. = 84m E Features ID (FET equivalent) = 35
auirgp35b60pd-e.pdf
PD - 97619 AUTOMOTIVE GRADE AUIRGP35B60PD-E WARP2 SERIES IGBT WITH C VCES = 600V ULTRAFAST SOFT RECOVERY DIODE VCE(on) typ. = 1.85V Features @ VGE = 15V IC = 22A NPT Technology, Positive Temperature Coefficient Lower VCE(SAT) Equivalent MOSFET Lower Parasitic Capacitances G Parameters Minimal Tail Current RCE(on) typ. = 84m HEXFRED Ultra Fast Soft-Recov
Otros transistores... IRGP4630DPBF , IRGS4630DPBF , IRGB4B60KD1PBF , IRGS4B60KD1PBF , IRGSL4B60KD1PBF , IRGIB10B60KD1P , IRGIB15B60KD1P , IRGP20B60PDPBF , GT30F133 , IRGP4062DPBF , IRGB4062DPBF , IRGP4062D-EPBF , IRGP4063DPBF , IRGP4063PBF , IRGP4066DPBF , IRGP4066D-EPBF , IRGP4068DPBF .
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
datasheet irfz44n | 2sd1047 transistor | mj802 | bu508a | bc560c | ksa1220ay | irf 830 | mpsa56 transistor