IRGP4063DPBF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRGP4063DPBF
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 330 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 96 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 40 nS
Coesⓘ - Capacitancia de salida, typ: 245 pF
Qgⓘ - Carga total de la puerta, typ: 95 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IRGP4063DPBF - IGBT
IRGP4063DPBF Datasheet (PDF)
irgp4063dpbf.pdf
IRGP4063DPbFIRGP4063D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeatures Low VCE (ON) Trench IGBT Technology CVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of the parts tested for 4X rated current (ILM)
irgp4063d.pdf
PD - 97210IRGP4063DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeatures Low VCE (ON) Trench IGBT Technology CVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of the parts tested for 4X rated current (ILM) P
irgp4063d1.pdf
IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V CG IC = 60A, TC =100C G tSC 5s, TJ(max) = 175C GE VCE(ON) typ. = 1.65V @ IC = 48A E C C EG G n-channelApplica onsIRGP4063D1PbFIRGP4063D1EPbFIndustrialMotorDriveG C EInvertersUPSGate Collecto
auirgp4063d.pdf
AUIRGP4063DAUTOMOTIVE GRADEAUIRGP4063D-EINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (ON) Trench IGBT TechnologyIC = 60A, TC = 100C Low switching losses Maximum Junction temperature 175 CG tSC 5s, TJ(max) = 175C 5 S short circuit SOA Square RBSOAEVCE(on) typ. = 1.6V 100% of the
auirgp4063d auirgp4063d-e.pdf
AUIRGP4063DAUTOMOTIVE GRADEAUIRGP4063D-EINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (ON) Trench IGBT TechnologyIC = 60A, TC = 100C Low switching losses Maximum Junction temperature 175 CG tSC 5s, TJ(max) = 175C 5 S short circuit SOA Square RBSOAEVCE(on) typ. = 1.6V 100% of the
Otros transistores... IRGSL4B60KD1PBF , IRGIB10B60KD1P , IRGIB15B60KD1P , IRGP20B60PDPBF , IRGP35B60PDPBF , IRGP4062DPBF , IRGB4062DPBF , IRGP4062D-EPBF , MBQ50T65FESC , IRGP4063PBF , IRGP4066DPBF , IRGP4066D-EPBF , IRGP4068DPBF , IRGP4068D-EPBF , IRGP4069DPBF , IRGP4650DPBF , IRGP4660DPBF .
Liste
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