IRGP4063PBF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRGP4063PBF
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 330
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 96
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.65
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 40
Capacitancia de salida (Cc), typ, pF: 245
Carga total de la puerta (Qg), typ, nC: 95
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IRGP4063PBF - IGBT
IRGP4063PBF Datasheet (PDF)
irgp4063-e.pdf
PD - 97404IRGP4063PbFINSULATED GATE BIPOLAR TRANSISTORIRGP4063-EPbFFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAGtSC 5s, TJ(max) = 175C 100% of the parts tested for ILM Positive VCE (ON) Temperature co-effic
irgp4063d.pdf
PD - 97210IRGP4063DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeatures Low VCE (ON) Trench IGBT Technology CVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of the parts tested for 4X rated current (ILM) P
irgp4063d1.pdf
IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V CG IC = 60A, TC =100C G tSC 5s, TJ(max) = 175C GE VCE(ON) typ. = 1.65V @ IC = 48A E C C EG G n-channelApplica onsIRGP4063D1PbFIRGP4063D1EPbFIndustrialMotorDriveG C EInvertersUPSGate Collecto
irgp4063.pdf
PD - 97404IRGP4063PbFINSULATED GATE BIPOLAR TRANSISTORIRGP4063-EPbFFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAGtSC 5s, TJ(max) = 175C 100% of the parts tested for ILM Positive VCE (ON) Temperature co-effic
auirgp4063d.pdf
AUIRGP4063DAUTOMOTIVE GRADEAUIRGP4063D-EINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (ON) Trench IGBT TechnologyIC = 60A, TC = 100C Low switching losses Maximum Junction temperature 175 CG tSC 5s, TJ(max) = 175C 5 S short circuit SOA Square RBSOAEVCE(on) typ. = 1.6V 100% of the
irgp4063dpbf.pdf
IRGP4063DPbFIRGP4063D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeatures Low VCE (ON) Trench IGBT Technology CVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of the parts tested for 4X rated current (ILM)
auirgp4063d auirgp4063d-e.pdf
AUIRGP4063DAUTOMOTIVE GRADEAUIRGP4063D-EINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (ON) Trench IGBT TechnologyIC = 60A, TC = 100C Low switching losses Maximum Junction temperature 175 CG tSC 5s, TJ(max) = 175C 5 S short circuit SOA Square RBSOAEVCE(on) typ. = 1.6V 100% of the
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Liste
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