All IGBT. IRGP4063PBF Datasheet

 

IRGP4063PBF IGBT. Datasheet pdf. Equivalent


   Type Designator: IRGP4063PBF
   Type: IGBT
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 330
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 96
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.65
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 40
   Collector Capacity (Cc), typ, pF: 245
   Total Gate Charge (Qg), typ, nC: 95
   Package: TO247

 IRGP4063PBF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGP4063PBF Datasheet (PDF)

 ..1. Size:1357K  infineon
 irgp4063pbf.pdf

IRGP4063PBF IRGP4063PBF

 6.1. Size:272K  international rectifier
 irgp4063-e.pdf

IRGP4063PBF IRGP4063PBF

PD - 97404IRGP4063PbFINSULATED GATE BIPOLAR TRANSISTORIRGP4063-EPbFFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAGtSC 5s, TJ(max) = 175C 100% of the parts tested for ILM Positive VCE (ON) Temperature co-effic

 6.2. Size:782K  international rectifier
 irgp4063d.pdf

IRGP4063PBF IRGP4063PBF

PD - 97210IRGP4063DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeatures Low VCE (ON) Trench IGBT Technology CVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of the parts tested for 4X rated current (ILM) P

 6.3. Size:1407K  international rectifier
 irgp4063d1.pdf

IRGP4063PBF IRGP4063PBF

IRGP4063D1PbF IRGP4063D1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V CG IC = 60A, TC =100C G tSC 5s, TJ(max) = 175C GE VCE(ON) typ. = 1.65V @ IC = 48A E C C EG G n-channelApplica onsIRGP4063D1PbFIRGP4063D1EPbFIndustrialMotorDriveG C EInvertersUPSGate Collecto

 6.4. Size:272K  international rectifier
 irgp4063.pdf

IRGP4063PBF IRGP4063PBF

PD - 97404IRGP4063PbFINSULATED GATE BIPOLAR TRANSISTORIRGP4063-EPbFFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAGtSC 5s, TJ(max) = 175C 100% of the parts tested for ILM Positive VCE (ON) Temperature co-effic

 6.5. Size:337K  international rectifier
 auirgp4063d.pdf

IRGP4063PBF IRGP4063PBF

AUIRGP4063DAUTOMOTIVE GRADEAUIRGP4063D-EINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (ON) Trench IGBT TechnologyIC = 60A, TC = 100C Low switching losses Maximum Junction temperature 175 CG tSC 5s, TJ(max) = 175C 5 S short circuit SOA Square RBSOAEVCE(on) typ. = 1.6V 100% of the

 6.6. Size:340K  infineon
 irgp4063dpbf.pdf

IRGP4063PBF IRGP4063PBF

IRGP4063DPbFIRGP4063D-EPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEFeatures Low VCE (ON) Trench IGBT Technology CVCES = 600V Low switching losses Maximum Junction temperature 175 CIC = 48A, TC = 100C 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of the parts tested for 4X rated current (ILM)

 6.7. Size:325K  infineon
 auirgp4063d auirgp4063d-e.pdf

IRGP4063PBF IRGP4063PBF

AUIRGP4063DAUTOMOTIVE GRADEAUIRGP4063D-EINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeatures Low VCE (ON) Trench IGBT TechnologyIC = 60A, TC = 100C Low switching losses Maximum Junction temperature 175 CG tSC 5s, TJ(max) = 175C 5 S short circuit SOA Square RBSOAEVCE(on) typ. = 1.6V 100% of the

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