IRGP4063PBF Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IRGP4063PBF Specs and Replacement

Type Designator: IRGP4063PBF

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 330 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 96 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Coesⓘ - Output Capacitance, typ: 245 pF

Package: TO247

IRGP4063PBF Substitution

- IGBTⓘ Cross-Reference Search

IRGP4063PBF datasheet

..1. Size:1357K international rectifier
irgp4063pbf.pdf pdf_icon

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6.1. Size:340K international rectifier
irgp4063dpbf.pdf pdf_icon

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6.2. Size:325K international rectifier
auirgp4063d auirgp4063d-e.pdf pdf_icon

AUIRGP4063D AUTOMOTIVE GRADE AUIRGP4063D-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Low VCE (ON) Trench IGBT Technology IC = 60A, TC = 100 C Low switching losses Maximum Junction temperature 175 C G tSC 5 s, TJ(max) = 175 C 5 S short circuit SOA Square RBSOA E VCE(on) typ. = 1.6V 100% of the... See More ⇒

6.3. Size:272K international rectifier
irgp4063-e.pdf pdf_icon

PD - 97404 IRGP4063PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4063-EPbF Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low switching losses Maximum Junction temperature 175 C IC = 48A, TC = 100 C 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of the parts tested for ILM Positive VCE (ON) Temperature co-effic... See More ⇒