IRGP4066DPBF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRGP4066DPBF
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 454
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 140
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.7
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 70
Capacitancia de salida (Cc), typ, pF: 245
Carga total de la puerta (Qg), typ, nC: 150
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IRGP4066DPBF - IGBT
IRGP4066DPBF Datasheet (PDF)
irgp4066dpbf irgp4066d-epbf.pdf
PD - 97576IRGP4066DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4066D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 75A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv
irgp4066d-e.pdf
PD - 97576IRGP4066DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4066D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 75A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv
irgp4066d.pdf
PD - 97576IRGP4066DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4066D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 75A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv
auirgp4066d1.pdf
AUIRGP4066D1AUTOMOTIVE GRADE AUIRGP4066D1-EINSULATED GATE BIPOLAR TRANSISTOR WITHCVCES = 600VULTRAFAST SOFT RECOVERY DIODEFeaturesIC(Nominal) = 75A Low VCE (ON) Trench IGBT Technology Low switching lossesGtSC 5s, TJ(max) = 175C Maximum Junction temperature 175 C 5 S short circuit SOAEVCE(on) typ. = 1.70V Square RBSOAn-channel 100
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ