All IGBT. IRGP4066DPBF Datasheet

 

IRGP4066DPBF Datasheet and Replacement


   Type Designator: IRGP4066DPBF
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 454 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 140 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 70 nS
   Coesⓘ - Output Capacitance, typ: 245 pF
   Package: TO247
      - IGBT Cross-Reference

 

IRGP4066DPBF Datasheet (PDF)

 ..1. Size:315K  international rectifier
 irgp4066dpbf irgp4066d-epbf.pdf pdf_icon

IRGP4066DPBF

PD - 97576IRGP4066DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4066D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 75A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv

 5.1. Size:331K  international rectifier
 irgp4066d-e.pdf pdf_icon

IRGP4066DPBF

PD - 97576IRGP4066DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4066D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 75A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv

 5.2. Size:331K  international rectifier
 irgp4066d.pdf pdf_icon

IRGP4066DPBF

PD - 97576IRGP4066DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4066D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 75A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv

 5.3. Size:363K  international rectifier
 auirgp4066d1.pdf pdf_icon

IRGP4066DPBF

AUIRGP4066D1AUTOMOTIVE GRADE AUIRGP4066D1-EINSULATED GATE BIPOLAR TRANSISTOR WITHCVCES = 600VULTRAFAST SOFT RECOVERY DIODEFeaturesIC(Nominal) = 75A Low VCE (ON) Trench IGBT Technology Low switching lossesGtSC 5s, TJ(max) = 175C Maximum Junction temperature 175 C 5 S short circuit SOAEVCE(on) typ. = 1.70V Square RBSOAn-channel 100

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History: SPM1004 | FGW40N120HD | 1MB20-060 | IQGB300N120I4 | 2MBI900VXA-120P-50 | JNG20T60HS | BT15T60A8F

Keywords - IRGP4066DPBF transistor datasheet

 IRGP4066DPBF cross reference
 IRGP4066DPBF equivalent finder
 IRGP4066DPBF lookup
 IRGP4066DPBF substitution
 IRGP4066DPBF replacement

 

 
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