IRGPS46160DPBF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRGPS46160DPBF
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 750
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 240
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.7
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 70
Capacitancia de salida (Cc), typ, pF: 550
Carga total de la puerta (Qg), typ, nC: 240
Paquete / Cubierta: SUPER-247 TO-274AA
Búsqueda de reemplazo de IRGPS46160DPBF - IGBT
IRGPS46160DPBF Datasheet (PDF)
irgps46160dpbf.pdf

IRGPS46160DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCIC = 160A, TC = 100CEtSC 5s, TJ(max) = 175CCG GVCE(on) typ. = 1.70V @ IC = 120AESuper-247n-channelApplications Industrial Motor DriveG C E InvertersGate Collector Emitter UPS WeldingFeatures BenefitsHigh efficiency in a wide range of
irgps46160d.pdf

IRGPS46160DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCIC = 160A, TC = 100CEtSC 5s, TJ(max) = 175CCG GVCE(on) typ. = 1.70V @ IC = 120AESuper-247n-channelApplications Industrial Motor DriveG C E InvertersGate Collector Emitter UPS WeldingFeatures BenefitsHigh efficiency in a wide range of a
irgps4067d.pdf

PD - 97736IRGPS4067DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures VCES = 600V Low VCE (on) Trench IGBT Technology Low Switching LossesIC(Nominal) = 120A 5s SCSOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient.EVCE(on) typ. = 1.70V
irgps40b120u.pdf

PD- 94295DIRGPS40B120UINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTCVCES = 1200VFeatures Non Punch Through IGBT Technology. 10s Short Circuit Capability.VCE(on) typ. = 3.12V Square RBSOA. Positive VCE (on) Temperature Coefficient.G@ VGE = 15V, Super-247 Package.En-channel ICE = 40A, Tj=25CBenefits Benchmark Efficiency for Motor Control
irgps40b120ud.pdf

PD- 94240AIRGPS40B120UDINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBTCVCES = 1200VFeatures Non Punch Through IGBT Technology. Low Diode VF.VCE(on) typ. = 3.12V 10s Short Circuit Capability. Square RBSOA.G@ VGE = 15V, Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coeffi
auirgps4067d1.pdf

PD - 97726CAUTOMOTIVE GRADEAUIRGPS4067D1INSULATED GATE BIPOLAR TRANSISTORWITH ULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeaturesIC = 160A, TC = 100C Low VCE (on) Trench IGBT Technology Low Switching Losses 6s SCSOA G tSC 6s, TJ(max) = 175C Square RBSOA 100% of the parts tested for ILM EVCE(on) typ. = 1.70V Positive VCE (on) Tempera
auirgps4070d0.pdf

AUTOMOTIVE GRADE AUIRGPS4070D0 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features CVCES = 600V Low V Trench IGBT Technology CE (on) Low Switching Losses IC = 160A, TC = 100C 6s SCSOA Gtsc 6s, TJ(MAX) = 175C Square RBSOA E 100% of the parts tested for ILM VCE(on) typ. = 1.70V n-channel Positive V
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , TGAN20N135FD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: SGT60U65FD1PT | SGT60U65FD1PN | SG60T120UDB3 | SG40T120DB | GT30F122 | HIA20N140IH-DA | HIA50N65IH-JA | HIA50N65H-SA | HIA50N65T-SA | HIA50N65H-JA | HIA50N65T-JA