IRGPS46160DPBF IGBT. Datasheet pdf. Equivalent
Type Designator: IRGPS46160DPBF
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 750 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 240 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 70 nS
Coesⓘ - Output Capacitance, typ: 550 pF
Package: SUPER-247 TO-274AA
IRGPS46160DPBF Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRGPS46160DPBF Datasheet (PDF)
irgps46160dpbf.pdf
IRGPS46160DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCIC = 160A, TC = 100CEtSC 5s, TJ(max) = 175CCG GVCE(on) typ. = 1.70V @ IC = 120AESuper-247n-channelApplications Industrial Motor DriveG C E InvertersGate Collector Emitter UPS WeldingFeatures BenefitsHigh efficiency in a wide range of
irgps46160d.pdf
IRGPS46160DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCIC = 160A, TC = 100CEtSC 5s, TJ(max) = 175CCG GVCE(on) typ. = 1.70V @ IC = 120AESuper-247n-channelApplications Industrial Motor DriveG C E InvertersGate Collector Emitter UPS WeldingFeatures BenefitsHigh efficiency in a wide range of a
irgps40b120u.pdf
PD- 94295DIRGPS40B120UINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTCVCES = 1200VFeatures Non Punch Through IGBT Technology. 10s Short Circuit Capability.VCE(on) typ. = 3.12V Square RBSOA. Positive VCE (on) Temperature Coefficient.G@ VGE = 15V, Super-247 Package.En-channel ICE = 40A, Tj=25CBenefits Benchmark Efficiency for Motor Control
auirgps4067d1.pdf
PD - 97726CAUTOMOTIVE GRADEAUIRGPS4067D1INSULATED GATE BIPOLAR TRANSISTORWITH ULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeaturesIC = 160A, TC = 100C Low VCE (on) Trench IGBT Technology Low Switching Losses 6s SCSOA G tSC 6s, TJ(max) = 175C Square RBSOA 100% of the parts tested for ILM EVCE(on) typ. = 1.70V Positive VCE (on) Tempera
irgps4067d.pdf
PD - 97736IRGPS4067DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures VCES = 600V Low VCE (on) Trench IGBT Technology Low Switching LossesIC(Nominal) = 120A 5s SCSOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient.EVCE(on) typ. = 1.70V
irgps40b120ud.pdf
PD- 94240AIRGPS40B120UDINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBTCVCES = 1200VFeatures Non Punch Through IGBT Technology. Low Diode VF.VCE(on) typ. = 3.12V 10s Short Circuit Capability. Square RBSOA.G@ VGE = 15V, Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coeffi
auirgps4070d0.pdf
AUTOMOTIVE GRADE AUIRGPS4070D0 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features CVCES = 600V Low V Trench IGBT Technology CE (on) Low Switching Losses IC = 160A, TC = 100C 6s SCSOA Gtsc 6s, TJ(MAX) = 175C Square RBSOA E 100% of the parts tested for ILM VCE(on) typ. = 1.70V n-channel Positive V
Datasheet: IRGP4068DPBF , IRGP4068D-EPBF , IRGP4069DPBF , IRGP4650DPBF , IRGP4660DPBF , IRGP50B60PD1PBF , IRGP6690DPBF , IRGP6690D-EPBF , TGPF30N40P , IRGS4640DPBF , IRGSL4640DPBF , IRGB4640DPBF , IRGP4640DPBF , IRGP4640D-EPBF , DGF15N60CTL , DGF15N60CTL0 , DGP10N60CTL .
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