All IGBT. IRGPS46160DPBF Datasheet

 

IRGPS46160DPBF IGBT. Datasheet pdf. Equivalent


   Type Designator: IRGPS46160DPBF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 750 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 240 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 70 nS
   Coesⓘ - Output Capacitance, typ: 550 pF
   Qgⓘ - Total Gate Charge, typ: 240 nC
   Package: SUPER-247 TO-274AA

 IRGPS46160DPBF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGPS46160DPBF Datasheet (PDF)

 ..1. Size:438K  infineon
 irgps46160dpbf.pdf

IRGPS46160DPBF IRGPS46160DPBF

IRGPS46160DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCIC = 160A, TC = 100CEtSC 5s, TJ(max) = 175CCG GVCE(on) typ. = 1.70V @ IC = 120AESuper-247n-channelApplications Industrial Motor DriveG C E InvertersGate Collector Emitter UPS WeldingFeatures BenefitsHigh efficiency in a wide range of

 3.1. Size:335K  international rectifier
 irgps46160d.pdf

IRGPS46160DPBF IRGPS46160DPBF

IRGPS46160DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODEVCES = 600VCCIC = 160A, TC = 100CEtSC 5s, TJ(max) = 175CCG GVCE(on) typ. = 1.70V @ IC = 120AESuper-247n-channelApplications Industrial Motor DriveG C E InvertersGate Collector Emitter UPS WeldingFeatures BenefitsHigh efficiency in a wide range of a

 8.1. Size:113K  international rectifier
 irgps40b120u.pdf

IRGPS46160DPBF IRGPS46160DPBF

PD- 94295DIRGPS40B120UINSULATED GATE BIPOLAR TRANSISTORUltraFast IGBTCVCES = 1200VFeatures Non Punch Through IGBT Technology. 10s Short Circuit Capability.VCE(on) typ. = 3.12V Square RBSOA. Positive VCE (on) Temperature Coefficient.G@ VGE = 15V, Super-247 Package.En-channel ICE = 40A, Tj=25CBenefits Benchmark Efficiency for Motor Control

 8.2. Size:306K  international rectifier
 auirgps4067d1.pdf

IRGPS46160DPBF IRGPS46160DPBF

PD - 97726CAUTOMOTIVE GRADEAUIRGPS4067D1INSULATED GATE BIPOLAR TRANSISTORWITH ULTRAFAST SOFT RECOVERY DIODECVCES = 600VFeaturesIC = 160A, TC = 100C Low VCE (on) Trench IGBT Technology Low Switching Losses 6s SCSOA G tSC 6s, TJ(max) = 175C Square RBSOA 100% of the parts tested for ILM EVCE(on) typ. = 1.70V Positive VCE (on) Tempera

 8.3. Size:272K  international rectifier
 irgps4067d.pdf

IRGPS46160DPBF IRGPS46160DPBF

PD - 97736IRGPS4067DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures VCES = 600V Low VCE (on) Trench IGBT Technology Low Switching LossesIC(Nominal) = 120A 5s SCSOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positive VCE (on) Temperature Coefficient.EVCE(on) typ. = 1.70V

 8.4. Size:134K  international rectifier
 irgps40b120ud.pdf

IRGPS46160DPBF IRGPS46160DPBF

PD- 94240AIRGPS40B120UDINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBTCVCES = 1200VFeatures Non Punch Through IGBT Technology. Low Diode VF.VCE(on) typ. = 3.12V 10s Short Circuit Capability. Square RBSOA.G@ VGE = 15V, Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coeffi

 8.5. Size:879K  infineon
 auirgps4070d0.pdf

IRGPS46160DPBF IRGPS46160DPBF

AUTOMOTIVE GRADE AUIRGPS4070D0 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features CVCES = 600V Low V Trench IGBT Technology CE (on) Low Switching Losses IC = 160A, TC = 100C 6s SCSOA Gtsc 6s, TJ(MAX) = 175C Square RBSOA E 100% of the parts tested for ILM VCE(on) typ. = 1.70V n-channel Positive V

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
Back to Top