DGW40N120CTH0 Todos los transistores

 

DGW40N120CTH0 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DGW40N120CTH0
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 500 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 24 nS
   Paquete / Cubierta: TO247
 

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DGW40N120CTH0 Datasheet (PDF)

 ..1. Size:391K  cn yangzhou yangjie elec
dgw40n120cth0.pdf pdf_icon

DGW40N120CTH0

RoHS DGW40N120CTH0 COMPLIANT IGBT Modules V 1200 V CEI 40 A CV I =40A 1.90 V CE(SAT) C Applications High frequency switching application Resonant converters Circuit Uninterruptible power supply Welding converters Features High breakdown voltage to 1200V for improved reliability Maximum junction temperature 175 Positive temp

 2.1. Size:411K  cn yangzhou yangjie elec
dgw40n120cth.pdf pdf_icon

DGW40N120CTH0

RoHS DGW40N120CTH COMPLIANT IGBT Modules V 1200 V CEI 40 A CV I =40A 2.10 V CE(SAT) C Applications High frequency switching application Circuit Resonant converters Uninterruptible power supply Welding converters Features High breakdown voltage to 1200V for improved reliability Maximum junction temperature 175 Positive tem

 3.1. Size:503K  cn yangzhou yangjie elec
dgw40n120ctl.pdf pdf_icon

DGW40N120CTH0

RoHS DGW40N120CTL COMPLIANT IGBT Discrete V 1200 V CEI 40 A CV I =40ACE(SAT) C 1.85 V Applications Inverter for motor drive AC and DC servo drive amplifier Circuit Uninterruptible power supply Features High breakdown voltage to 1200V for improved reliability Maximum junction temperature 175 Positive temperature coefficient Incl

 8.1. Size:406K  cn yangzhou yangjie elec
dgw40n65cth.pdf pdf_icon

DGW40N120CTH0

RoHS DGW40N65CTH COMPLIANT IGBT Discrete V 650 V CEI 40 A CV I = A 1.95 V CE(SAT) C 40 Applications High frequency switching application Medical applications Circuit Uninterruptible power supply Motion/servo control Features Low switching losses Maximum junction temperature 175 Positive temperature coefficient High rug

Otros transistores... DGW15N65CTL , DGW20N60CTL , DGW20N65CTL , DGW25N120CTL , DGW30N65BTH , DGW30N65CTH , DGW30N65CTL , DGW40N120CTH , BT15T120ANF , DGW40N120CTL , DGW40N65BTH , DGW40N65CTH , DGW40N65CTL , DGW50N65BTH , DGW50N65CTH , DGW50N65CTL1 , DGW60N65BTH .

History: IRGC15B120KB | SGF23N60UF

 

 
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