All IGBT. DGW40N120CTH0 Datasheet

 

DGW40N120CTH0 Datasheet and Replacement


   Type Designator: DGW40N120CTH0
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 24 nS
   Qgⓘ - Total Gate Charge, typ: 215 nC
   Package: TO247
      - IGBT Cross-Reference

 

DGW40N120CTH0 Datasheet (PDF)

 ..1. Size:391K  cn yangzhou yangjie elec
dgw40n120cth0.pdf pdf_icon

DGW40N120CTH0

RoHS DGW40N120CTH0 COMPLIANT IGBT Modules V 1200 V CEI 40 A CV I =40A 1.90 V CE(SAT) C Applications High frequency switching application Resonant converters Circuit Uninterruptible power supply Welding converters Features High breakdown voltage to 1200V for improved reliability Maximum junction temperature 175 Positive temp

 2.1. Size:411K  cn yangzhou yangjie elec
dgw40n120cth.pdf pdf_icon

DGW40N120CTH0

RoHS DGW40N120CTH COMPLIANT IGBT Modules V 1200 V CEI 40 A CV I =40A 2.10 V CE(SAT) C Applications High frequency switching application Circuit Resonant converters Uninterruptible power supply Welding converters Features High breakdown voltage to 1200V for improved reliability Maximum junction temperature 175 Positive tem

 3.1. Size:503K  cn yangzhou yangjie elec
dgw40n120ctl.pdf pdf_icon

DGW40N120CTH0

RoHS DGW40N120CTL COMPLIANT IGBT Discrete V 1200 V CEI 40 A CV I =40ACE(SAT) C 1.85 V Applications Inverter for motor drive AC and DC servo drive amplifier Circuit Uninterruptible power supply Features High breakdown voltage to 1200V for improved reliability Maximum junction temperature 175 Positive temperature coefficient Incl

 8.1. Size:406K  cn yangzhou yangjie elec
dgw40n65cth.pdf pdf_icon

DGW40N120CTH0

RoHS DGW40N65CTH COMPLIANT IGBT Discrete V 650 V CEI 40 A CV I = A 1.95 V CE(SAT) C 40 Applications High frequency switching application Medical applications Circuit Uninterruptible power supply Motion/servo control Features Low switching losses Maximum junction temperature 175 Positive temperature coefficient High rug

Datasheet: DGW15N65CTL , DGW20N60CTL , DGW20N65CTL , DGW25N120CTL , DGW30N65BTH , DGW30N65CTH , DGW30N65CTL , DGW40N120CTH , RJP6065DPM , DGW40N120CTL , DGW40N65BTH , DGW40N65CTH , DGW40N65CTL , DGW50N65BTH , DGW50N65CTH , DGW50N65CTL1 , DGW60N65BTH .

History: IGC05R60D | TGAN40N120F2D | DIM1200ASM45-TS001 | IGC36T120T8L | TGAN40N110FD

Keywords - DGW40N120CTH0 transistor datasheet

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